Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A)

HEXFET? Power MOSFET ● Dynamic dv/dt Rating ● Repetitive Avalanche Rated ● Current Sense ● Fast Switching ● Ease of Paralleling ● Simple Drive Requirements

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IRF

Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A)

Infineon

英飛凌

MOSFET N-CH 250V 14A TO-220-5

Vishay

威世

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

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FAIRCHILD

仙童半導(dǎo)體

Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A)

Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applicat

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IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

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VISHAYVishay Siliconix

威世威世科技公司