compact type metal clad wire wound resistors

[RaRaohm] Compact Type Metal Clad Wire Wound Resistors

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ETCList of Unclassifed Manufacturers

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N-CHANNEL POWER MOSFETS

FEATURES ? Low RDs

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SAMSUNG

三星

N-Channel Power MOSFETs, 11 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. ? Low RDs

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FAIRCHILD

仙童半導(dǎo)體

8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

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INTERSIL