絲?。?a target="_blank" title="Marking" href="/60r090f7/marking.html">60R090F7；Package：PG-TO247-3；600V CoolMOSa CFD7 Power Transistor

Features ? Ultra-fast body diode ? Low gate charge ? Best-in-class reverse recovery charge (Qrr) ? Improved MOSFET reverse diode dv/dt and diF/dt ruggedness ? Lowest FOM RDS(on)*Qg and RDS(on)*Eoss ? Best-in-class RDS(on) in SMD and THD packages

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英飛凌對諧振高功率拓撲的回答

The 600V CoolMOS? CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS? 7 series. CoolMOS? CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compare ? Ultra-fast body diode\n? Best-in-class reverse recovery charge (Qrr)\n? Improved reverse diode dv/dt and dif/dt ruggedness\n? Lowest FOM RDS(on) x Qg and Eoss\n? Best-in-class RDS(on)/package combinations\n\n優(yōu)勢:\n? Best-in-class hard commutation ruggedness\n? Highest reliability for resonant topol;

Infineon

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MOSFET 600V CoolMOS? CFD7 Power Transistor

MOSFET 600V CoolMOSa CFD7 Power Transistor CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS? CFD7 is the successor to the CoolMOS? CFD2 series and is an opti

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600V CoolMOS??CFD7 Power Transistor

文件：1.04526 Mbytes 頁數(shù)：14 Pages

INFINEON

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600V CoolMOS? CFD7 Power Transistor

文件：1.73195 Mbytes 頁數(shù)：14 Pages

INFINEON

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