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          首頁>IPB60R090CFD7>規(guī)格書詳情

          IPB60R090CFD7中文資料英飛凌數(shù)據(jù)手冊(cè)PDF規(guī)格書

          PDF無圖
          廠商型號(hào)

          IPB60R090CFD7

          功能描述

          MOSFET 600V CoolMOS? CFD7 Power Transistor

          絲印標(biāo)識(shí)

          60R090F7

          封裝外殼

          PG-TO263-3

          文件大小

          1.26158 Mbytes

          頁面數(shù)量

          14

          生產(chǎn)廠商

          INFINEON

          中文名稱

          英飛凌

          網(wǎng)址

          網(wǎng)址

          數(shù)據(jù)手冊(cè)

          下載地址一下載地址二到原廠下載

          更新時(shí)間

          2026-1-19 19:02:00

          人工找貨

          IPB60R090CFD7價(jià)格和庫存,歡迎聯(lián)系客服免費(fèi)人工找貨

          IPB60R090CFD7規(guī)格書詳情

          MOSFET

          600V CoolMOSa CFD7 Power Transistor

          CoolMOS? is a revolutionary technology for high voltage power

          MOSFETs, designed according to the superjunction (SJ) principle and

          pioneered by Infineon Technologies. The latest CoolMOS? CFD7 is the

          successor to the CoolMOS? CFD2 series and is an optimized platform

          tailored to target soft switching applications such as phase-shift full-bridge

          (ZVS) and LLC. Resulting from reduced gate charge (Qg), best-in-class

          reverse recovery charge (Qrr) and improved turn off behavior CoolMOS?

          CFD7 offers highest efficiency in resonant topologies. As part of Infineon’s

          fast body diode portfolio, this new product series blends all advantages of

          a fast switching technology together with superior hard commutation

          robustness, without sacrificing easy implementation in the design-in

          process. The CoolMOS? CFD7 technology meets highest efficiency and

          reliability standards and furthermore supports high power density

          solutions. Altogether, CoolMOS? CFD7 makes resonant switching

          topologies more efficient, more reliable, lighter and cooler.

          特性 Features

          ? Ultra-fast body diode

          ? Low gate charge

          ? Best-in-class reverse recovery charge (Qrr)

          ? Improved MOSFET reverse diode dv/dt and diF/dt ruggedness

          ? Lowest FOM RDS(on)*Qg and RDS(on)*Eoss

          ? Best-in-class RDS(on) in SMD and THD packages

          Benefits

          ? Excellent hard commutation ruggedness

          ? Highest reliability for resonant topologies

          ? Highest efficiency with outstanding ease-of-use / performance tradeoff

          ? Enabling increased power density solutions

          供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
          Infineon/英飛凌
          21+
          PG-TO263-3
          6820
          只做原裝,質(zhì)量保證
          詢價(jià)
          Infineon/英飛凌
          23+
          PG-TO263-3
          12700
          買原裝認(rèn)準(zhǔn)中賽美
          詢價(jià)
          Infineon(英飛凌)
          23+
          NA
          20094
          正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持
          詢價(jià)
          INFINEON
          20+
          D2PAK(TO-263)
          36900
          原裝優(yōu)勢(shì)主營型號(hào)-可開原型號(hào)增稅票
          詢價(jià)
          Infineon/英飛凌
          24+
          PG-TO263-3
          25000
          原裝正品,假一賠十!
          詢價(jià)
          INFINEON
          25+23+
          TO-263
          26709
          絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
          詢價(jià)
          Infineon
          18+
          TO-263
          85600
          保證進(jìn)口原裝可開17%增值稅發(fā)票
          詢價(jià)
          Infineon
          24+
          PG-TO263-3
          9000
          只做原裝正品 有掛有貨 假一賠十
          詢價(jià)
          INFINOEN
          25+
          TO-263-3
          90000
          一級(jí)代理進(jìn)口原裝現(xiàn)貨、假一罰十價(jià)格合理
          詢價(jià)
          Infineon/英飛凌
          2021+
          PG-TO263-3
          9600
          原裝現(xiàn)貨,歡迎詢價(jià)
          詢價(jià)
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