Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features ? Ultra-fast body diode ? Very high commutation ruggedness ? Extremely low losses due to very low FOM Rdso

文件：2.33045 Mbytes 頁數(shù)：16 Pages

INFINEON

英飛凌

650V、N溝道、最大110mΩ、汽車MOSFET、TO-220、CoolMOS ? CFDA

650V CoolMOS? CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS? power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS? CFDA series provide ? First 650V automotive qualified technology with integrated fast body diode on the market\n? Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt\n? Low gate charge value Q g\n? Low Q rr at repetitive commutation on body diode & low Q oss\n? Reduced turn on and turn of ;

Infineon

英飛凌

N-Channel MOSFET Transistor

? DESCRITION ? Suitable for resonant Switching ? FEATURES ? Static drain-source on-resistance: RDS(on)≤110m? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.75 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features ? Ultra-fast body diode ? Very high commutation ruggedness ? Extremely low losses due to very low FOM Rdso

文件：3.85934 Mbytes 頁數(shù)：20 Pages

INFINEON

英飛凌

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features ? Ultra-fast body diode ? Very high commutation ruggedness ? Extremely low losses due to very low FOM Rdso

文件：3.85934 Mbytes 頁數(shù)：20 Pages

INFINEON

英飛凌