IPD60R600P7S中文資料Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use數(shù)據(jù)手冊Infineon規(guī)格書

描述 Description

The 600V CoolMOS? P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS? P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS? 7th generation platform ensure its high efficiency.

特性 Features

Efficiency

? 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G
Ease-of-use

? Integrated ESD diode from 180mN and above R DS(on)s
? Integrated gate resistor R G
? Rugged body diode
? Wide portfolio in through hole and surface mount packages
? Both standard grade and industrial grade parts are available

優(yōu)勢:
Efficiency

? Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency
Ease-of-use

? Ease-of-use in manufacturing environments by stopping ESD failures occurring
? Integrated R G reduces MOSFET oscillation sensitivity
? MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
? Excellent ruggedness during hard commutation of the body diode seen in LLC topology
? Suitable for a wide variety of end applications and output powers
? Parts available suitable for consumer and industrial applications

應(yīng)用 Application

? TV power supply
? Industrial SMPS
? Server
? Telecom?
? Lighting