絲印：95R450D7；Package：PG-TO263-3；MOSFET 950V CoolMOSa PFD7 SJ Power Device

Features ? Integrated ultra-fast body diode ? Best-in-class reverse recovery charge Qrr ? Best-in-class FOM RDS(on) * Eoss, reduced Qg, Ciss, and Coss ? Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V ? Integrated fast body diode ? Best-in-class CoolMOS? quality and relia

文件：1.23298 Mbytes 頁數(shù)：14 Pages

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采用 TO-263 封裝的 950 V CoolMOS ? PFD7 超結(jié) MOSFET

PFD7，專為實現(xiàn)超高功率密度和最高效率設(shè)計。這些產(chǎn)品主要用于 PFC 和 LLC/LCC 拓撲結(jié)構(gòu)的消費類和工業(yè)用開關(guān)電源應(yīng)用。與 CoolMOS? C3 相比，950 V CoolMOS? PFD7 的 Qg 降低了 60%（從而降低了驅(qū)動損耗、提高了輕載和滿載效率），還配備一個快速且堅固的體二極管。 ? CoolMOS ? 7 系列\(zhòng)n? 低柵極電荷\n? 低存儲能量 COSS\n? 低 Qrr\n? 經(jīng)過現(xiàn)場驗證的 CoolMOS ?質(zhì)量\n? 自 1998 年以來的 CoolMOS ?;

Infineon

英飛凌

MOSFET 950V CoolMOSa PFD7 SJ Power Device

Features ? Integrated ultra-fast body diode ? Best-in-class reverse recovery charge Qrr ? Best-in-class FOM RDS(on) * Eoss, reduced Qg, Ciss, and Coss ? Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V ? Integrated fast body diode ? Best-in-class CoolMOS? quality and relia

文件：996.79 Kbytes 頁數(shù)：14 Pages

INFINEON

英飛凌

MOSFET 950V CoolMOSa PFD7 SJ Power Device

Features ? Integrated ultra-fast body diode ? Best-in-class reverse recovery charge Qrr ? Best-in-class FOM RDS(on) * Eoss, reduced Qg, Ciss, and Coss ? Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V ? Integrated fast body diode ? Best-in-class CoolMOS? quality and relia

文件：1.11955 Mbytes 頁數(shù)：14 Pages

INFINEON

英飛凌