絲印：95R450D7；Package：PG-TO220FullPAK；MOSFET 950V CoolMOSa PFD7 SJ Power Device

Features ? Integrated ultra-fast body diode ? Best-in-class reverse recovery charge Qrr ? Best-in-class FOM RDS(on) * Eoss, reduced Qg, Ciss, and Coss ? Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V ? Integrated fast body diode ? Best-in-class CoolMOS? quality and relia

文件：1.11955 Mbytes 頁數(shù)：14 Pages

INFINEON

英飛凌

采用 TO-220-3 封裝的 950 V CoolMOS ? PFD7 超結(jié) MOSFET

\n優(yōu)勢:\n? Best-in-class hard commutation ruggedness enabling usage across topologies\n? Up to 0.5% efficiency gain and up to 4°C lower MOSFET temperature compared to CoolMOS? C3\n? Power density improvement compared to latest CoolMOS? C3 and the closest competitor\n? Improved production yield by ;

Infineon

英飛凌

MOSFET 950V CoolMOSa PFD7 SJ Power Device

Features ? Integrated ultra-fast body diode ? Best-in-class reverse recovery charge Qrr ? Best-in-class FOM RDS(on) * Eoss, reduced Qg, Ciss, and Coss ? Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V ? Integrated fast body diode ? Best-in-class CoolMOS? quality and relia

文件：1.23298 Mbytes 頁數(shù)：14 Pages

INFINEON

英飛凌

MOSFET 950V CoolMOSa PFD7 SJ Power Device

Features ? Integrated ultra-fast body diode ? Best-in-class reverse recovery charge Qrr ? Best-in-class FOM RDS(on) * Eoss, reduced Qg, Ciss, and Coss ? Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V ? Integrated fast body diode ? Best-in-class CoolMOS? quality and relia

文件：996.79 Kbytes 頁數(shù)：14 Pages

INFINEON

英飛凌