N-channel, normal level

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絲印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

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無錫固電

N 溝道功率 MOSFET

OptiMOS? 5 100V 功率 MOSFETs 專為通信和服務(wù)器電源中的同步整流而設(shè)計(jì)。此外，這些器件還可以在其他工業(yè)應(yīng)用中使用，例如太陽(yáng)能、低壓驅(qū)動(dòng)器和適配器。新型 OptiMOS? 5 100V MOSFET 采用七種不同封裝，提供了行業(yè)內(nèi)較低 R DS(on)。 ? 針對(duì)同步整流進(jìn)行優(yōu)化\n? 非常適合高開關(guān)頻率\n? 輸出電容降低高達(dá) 44%\n? 與前一代相比降低高達(dá) 43%\n\n優(yōu)勢(shì):\n? 高系統(tǒng)效率\n? 降低開關(guān)和通態(tài)損耗\n? 減少并聯(lián)\n? 增加功率密度\n? 低電壓過沖;

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絲?。?a target="_blank" title="Marking" href="/d2pak/marking.html">D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

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無錫固電

絲?。?a target="_blank" title="Marking" href="/020n10lf/marking.html">020N10LF；Package：PG-TO263-3；OptiMOSTM 5 Linear FET, 100 V

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結(jié)合低 RDS(on) 與寬安全工作區(qū) (SOA)

OptiMOS? Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating a ? Combination of low R DS(on) and wide safe operating area (SOA)\n? High max. pulse current\n? High continuous pulse current\n\n優(yōu)勢(shì):\n? Rugged linear mode operation\n? Low conduction losses\n? Higher in-rush current enabled for faster start-up and shorter down time;

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