絲?。?a target="_blank" title="Marking" href="/020n10lf/marking.html">020N10LF；Package：PG-TO263-3；OptiMOSTM 5 Linear FET, 100 V

文件：1.01779 Mbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

絲印：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

文件：244.15 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

結合低 RDS(on) 與寬安全工作區(qū) (SOA)

OptiMOS? Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating a ? Combination of low R DS(on) and wide safe operating area (SOA)\n? High max. pulse current\n? High continuous pulse current\n\n優(yōu)勢:\n? Rugged linear mode operation\n? Low conduction losses\n? Higher in-rush current enabled for faster start-up and shorter down time;

Infineon

英飛凌

OptiMOSTM 5 Power-Transistor, 100 V

Features ? Ideal for high frequency switching and sync. rec. ? Excellent gate charge x RDS(on) product (FOM) ? Very low on-resistance RDS(on) ? N-channel, normal level ? 100 avalanche tested ? Pb-free plating; RoHS compliant ? Halogen-free according to IEC61249-2-21

文件：1.029609 Mbytes 頁數(shù)：11 Pages

INFINEON

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100V Single N-Channel MOSFET

文件：875.47 Kbytes 頁數(shù)：8 Pages

PFC

節(jié)能元件