Combining a low RDS(on) with a wide safe operating area (SOA)

OptiMOS? Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating a ? Combination of low R DS(on) and wide safe operating area (SOA)\n? High max. pulse current\n? High continuous pulse current?\n\n優(yōu)勢:\n? Rugged linear mode operation\n? Low conduction losses?\n? Higher in-rush current enabled for faster start-up and shorter down time;

Infineon

英飛凌

絲印：017N10LF；Package：PG-TO263-7；OptiMOSTM 5 Linear FET, 100 V

文件：1.10321 Mbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

N-channel, normal level

Features ?Idealforhighfrequencyswitchingandsync.rec. ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?N-channel,normallevel ?100avalanchetested ?Pb-freeplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Halogen-freeaccordingtoIEC61249-2-21

文件：1.27126 Mbytes 頁數(shù)：12 Pages

INFINEON

英飛凌

N-channel, normal level

Features ?Idealforhighfrequencyswitchingandsync.rec. ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?N-channel,normallevel ?100avalanchetested ?Pb-freeplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Halogen-freeaccordingtoIEC61249-2-21

文件：1.27126 Mbytes 頁數(shù)：12 Pages

INFINEON

英飛凌

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 27A@ TC=25℃ · Drain Source Voltage -VDSS= 30V(Min) · Static Drain-Source On-Resistance -RDS(on) = 20mΩ(Max)@VGS= 10V APPLICATIONS · Motor Drive, DC-DC Converter, Power Switch and Solenoid Drive.

文件：335.58 Kbytes 頁數(shù)：3 Pages

ISC

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