絲?。?a target="_blank" title="Marking" href="/017n10n5/marking.html">017N10N5；Package：PG-TO263-7；N-channel, normal level

Features ?Idealforhighfrequencyswitchingandsync.rec. ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?N-channel,normallevel ?100avalanchetested ?Pb-freeplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Halogen-freeaccordingtoIEC61249-2-21

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INFINEON

英飛凌

N 溝道功率 MOSFET

OptiMOS? 5 100V 功率 MOSFETs 專為通信和服務(wù)器電源中的同步整流而設(shè)計(jì)。此外，這些器件還可以在其他工業(yè)應(yīng)用中使用，例如太陽(yáng)能、低壓驅(qū)動(dòng)器和適配器。新型 OptiMOS? 5 100V MOSFET 采用七種不同封裝，提供了行業(yè)內(nèi)較低 R DS(on)。 ? 針對(duì)同步整流進(jìn)行優(yōu)化\n? 非常適合高開(kāi)關(guān)頻率\n? 輸出電容降低高達(dá) 44%\n? 與前一代相比降低高達(dá) 43%\n\n優(yōu)勢(shì):\n? 高系統(tǒng)效率\n? 降低開(kāi)關(guān)和通態(tài)損耗\n? 減少并聯(lián)\n? 增加功率密度\n? 低電壓過(guò)沖;

Infineon

英飛凌

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 27A@ TC=25℃ · Drain Source Voltage -VDSS= 30V(Min) · Static Drain-Source On-Resistance -RDS(on) = 20mΩ(Max)@VGS= 10V APPLICATIONS · Motor Drive, DC-DC Converter, Power Switch and Solenoid Drive.

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ISC

無(wú)錫固電

絲?。?a target="_blank" title="Marking" href="/017n10lf/marking.html">017N10LF；Package：PG-TO263-7；OptiMOSTM 5 Linear FET, 100 V

文件：1.10321 Mbytes 頁(yè)數(shù)：11 Pages

INFINEON

英飛凌

Combining a low RDS(on) with a wide safe operating area (SOA)

OptiMOS? Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating a ? Combination of low R DS(on) and wide safe operating area (SOA)\n? High max. pulse current\n? High continuous pulse current?\n\n優(yōu)勢(shì):\n? Rugged linear mode operation\n? Low conduction losses?\n? Higher in-rush current enabled for faster start-up and shorter down time;

Infineon

英飛凌