Indigo520 Transmitter

Features Supports 2 detachable measurement devices simultaneously Data logging of all measurement parameters IP66 and NEMA 4 rated metal enclosure 4 configurable galvanically isolated analog outputs 2-wire current loop analog input 2 relays Ethernet connection with web interface for r

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VAISALA

維薩拉

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS ■ TYPICAL RDS(on) = 0.23 ? ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE APPLICATIONS ■ HIGH CURRENT, HIGH SPE

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STMICROELECTRONICS

意法半導(dǎo)體

N - CHANNEL ENHANCEMENT MODE VERTICAL DMOS POWER FETs

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS POWER FETs Applications □ Motor control □ Converters □ Amplifiers □ Switches □ Power supply circuits □ Drivers (Relays, Hammers, Solenoides, Lamps, Memeories, Displays, Bipolar Transistors, etc.)

文件：74.44 Kbytes 頁數(shù)：2 Pages

SUTEX

N-Channel Power MOSFETs, 11 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. ? Low RDs

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FAIRCHILD

仙童半導(dǎo)體