觸控芯片

發(fā)射電壓高達(dá)18V，10點(diǎn)觸控，F(xiàn)PS137，首點(diǎn)報(bào)點(diǎn)延遲25ms；優(yōu)秀的線性度，支持納米銀、ITO、Metalmesh、打印金屬網(wǎng)格的全貼合及零貼合，底層協(xié)議可開放。 Maximum 64 configurable Tx/Rx sensing channels.\r\nBuild-in RX sensing block for Mutual Capacitive Sensing.\r\nBuild-in 10 bits ADCx4 and 8 bits DACx4.\r\nBuild-in 4K byte SRAM x 2.\r\nSampling rate > 100Hz (up to 400Hz base on recipe setting).\r\nBuffer: 64-bytes for ADC (raw data) and 64-bytes for;

CHUYU

觸宇

Power MOSFET(Vdss=-40V)

Description These P-channel HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati

文件：109.38 Kbytes 頁數(shù)：9 Pages

IRF

Ultra Low On-Resistance

文件：302.1 Kbytes 頁數(shù)：10 Pages

INFINEON

英飛凌

Ultra Low On-Resistance

Description These P-channel HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicatio

文件：207.68 Kbytes 頁數(shù)：9 Pages

IRF