絲印：I1；Package：X2QFN；TUSB211 USB 2.0 High Speed Signal Conditioner

1 Features 1? Compatible with USB 2.0, OTG 2.0 and BC 1.2 ? Support for LS, FS, HS signaling ? Active Power Consumption of 55 mW (Typical) with 3.3-V Single Supply ? Selectable Signal Gain Via External Pulldown Resistor ? Does Not Break DP, DM Trace ? Scalable Solution – Daisy Chain Device

文件：595.72 Kbytes 頁數(shù)：20 Pages

TI

德州儀器

絲?。?strong>I1；Package：X2QFN；TUSB211 USB 2.0 High Speed Signal Conditioner

1 Features 1? Compatible with USB 2.0, OTG 2.0 and BC 1.2 ? Support for LS, FS, HS signaling ? Active Power Consumption of 55 mW (Typical) with 3.3-V Single Supply ? Selectable Signal Gain Via External Pulldown Resistor ? Does Not Break DP, DM Trace ? Scalable Solution – Daisy Chain Device

文件：595.72 Kbytes 頁數(shù)：20 Pages

TI

德州儀器

絲印：I11NM80；Package：I2PAK；N-channel 800 V, 0.35 Ω, 11 A MDmesh? Power MOSFET in D2PAK, TO-220FP, I2PAK, TO-220, TO-247

Features ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Best RDS(on)*Qg in the industry Applications ■ Switching applications Description These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh? technology, which associates th

文件：908.99 Kbytes 頁數(shù)：22 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/i10n60/marking.html">I10N60；Package：TO-262；10A 600V N-channel Enhancement Mode Power MOSFET

文件：976.2 Kbytes 頁數(shù)：11 Pages

WXDH

東海半導(dǎo)體

絲印：I10N60；Package：TO-262；10A 600V N-channel Enhancement Mode Power MOSFET

文件：964.56 Kbytes 頁數(shù)：11 Pages

WXDH

東海半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/i10n60/marking.html">I10N60；Package：TO-262；10A 600V N-channel Enhancement Mode Power MOSFET

文件：963.95 Kbytes 頁數(shù)：11 Pages

WXDH

東海半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/i10n60/marking.html">I10N60；Package：TO-262；10A 600V N-channel Enhancement Mode Power MOSFET

文件：964.93 Kbytes 頁數(shù)：11 Pages

WXDH

東海半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/i10n65/marking.html">I10N65；Package：TO-262；10A 650V N-channel Enhancement Mode Power MOSFET

文件：1.07913 Mbytes 頁數(shù)：10 Pages

WXDH

東海半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/i10n65/marking.html">I10N65；Package：TO-262；10A 650V N-channel Enhancement Mode Power MOSFET

文件：1.07854 Mbytes 頁數(shù)：10 Pages

WXDH

東海半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/i10n65/marking.html">I10N65；Package：TO-262；10A 650V N-channel Enhancement Mode Power MOSFET

文件：1.07919 Mbytes 頁數(shù)：10 Pages

WXDH

東海半導(dǎo)體