Controlled avalanche characteristic combined Low forward voltage drop

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LRC

樂山無線電

Controlled avalanche characteristic combined

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LEIDITECH

雷卯電子

Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator

Features ? Low forward resistance. (rf = 5.5 max) ? MPAK package is suitable for high density surface mounting and high speed assembly.

文件：28.41 Kbytes 頁數(shù)：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator

Features ? Low forward resistance. (rf = 5.5? max) ? MPAK package is suitable for high density surface mounting and high speed assembly.

文件：68.07 Kbytes 頁數(shù)：5 Pages

RENESAS

瑞薩

Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator

Features ? Low forward resistance. (rf = 5.5 max) ? MPAK package is suitable for high density surface mounting and high speed assembly.

文件：28.41 Kbytes 頁數(shù)：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator

Features ? Low forward resistance. (rf = 5.5 max) ? MPAK package is suitable for high density surface mounting and high speed assembly.

文件：28.4 Kbytes 頁數(shù)：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator

Features ? Low forward resistance. (rf = 5.5 Ω max) ? MPAK package is suitable for high density surface mounting and high speed assembly.

文件：67.49 Kbytes 頁數(shù)：5 Pages

RENESAS

瑞薩

Silicon Epitaxial Planar Pin Diode for High Frequency Attenuator

Features ? Low forward resistance. (rf = 5.5 ? max) ? MPAK package is suitable for high density surface mounting and high speed assembly.

文件：156.86 Kbytes 頁數(shù)：5 Pages

RENESAS

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Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator

HITACHI

日立

Diodes>Switching

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