Silicon Epitaxial Planar Pin Diode for High Frequency Attenuator

Features ? Low forward resistance. (rf = 5.5 ? max) ? MPAK package is suitable for high density surface mounting and high speed assembly.

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GaAlAs Infrared Light Emitting Diode

GaAlAs Infrared Light Emitting Diode Light source for distance measuring systems Features ● High-power output, high-efficiency : PO = 5.5 mW (typ.) ● Fast response and high-speed modulation capability : tr, tf = 20 ns (typ.) ● Infrared light emission close to monochromatic light : λP = 880 nm

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GaAlAs Infrared Light Emitting Diode

GaAlAs Infrared Light Emitting Diode Light source for distance measuring systems ■ Features ? High-power output, high-efficiency: PO = 5.5 mW (typ.) ? Fast response and high-speed modulation capability: tr, tf = 20 ns (typ.) ? Infrared light emission close to monochromatic light: λP = 880 nm

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GaAlAs Infrared Light Emitting Diode

GaAlAs Infrared Light Emitting Diode Light source for distance measuring systems Features ● High-power output, high-efficiency : PO = 5.5 mW (typ.) ● Fast response and high-speed modulation capability : tr, tf =20 ns (typ.) ● Infrared light emission close to monochromatic light : λP = 880 nm(

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