普通紅外型電路

該芯片采用 OTP 工藝制造，高性能、低功耗紅外發(fā)射電路，T-KEY 三角矩陣鍵盤，最多可組成 52 個按鍵。除了能實現(xiàn) 50 多種常用基本碼型外，還可實現(xiàn)一些特殊碼型。配合 HS9060P 開發(fā)軟件及燒寫器，可極大提高用戶產(chǎn)品開發(fā)質(zhì)量，縮短開發(fā)周期。 ◆ 低靜態(tài)電流：<2uA\n◆ 工作電壓范圍寬：2.0V~3.6V\n◆ 外部線路元器件少\n◆ 支持內(nèi)置或外接三極管驅(qū)動發(fā)射頭\n◆ 內(nèi)置振蕩電路，誤差<=±1.5%\n◆ 軟件編程容易，開發(fā)效率高\n◆ 發(fā)碼驅(qū)動 500mA（3V0.2VDD）\n◆ ESSSOP10 封裝;

H-SUN

華芯微電子

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The LET9060 is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broadband, commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. LET9060 boasts the excellent gain,

文件：225.91 Kbytes 頁數(shù)：11 Pages

STMICROELECTRONICS

意法半導(dǎo)體

RF POWER TRANSISTORS Ldmos Enhanced Technology

DESCRIPTION The LET9060C is an N-Channel enhancement-mode lateral Field-Effect RF power transistor, designed for high gain broadband, commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1.0 GHz. LET9060C boasts the excellent gain, linearity and r

文件：36.63 Kbytes 頁數(shù)：5 Pages

STMICROELECTRONICS

意法半導(dǎo)體

RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs

文件：164.49 Kbytes 頁數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體