| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
LET9060F | 60W 28V HF to 2GHz LDMOS TRANSISTOR in flangeless package The LET9060F is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9060F is designed for high gain and broadband performance operating in common source mode at 28 V. It ? Excellent thermal stability\n? Common source configuration\n? POUT (@ 28 V)= 60 W with 18 dB gain @ 945 MHz? POUT (@ 36 V)= 90 W with 18 dB gain @ 945 MHz\n? BeO free package\n? In compliance with the 2002/95/EC european directive; | ST 意法半導(dǎo)體 | ST | |
LET9060F | RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs 文件:164.49 Kbytes 頁(yè)數(shù):9 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | |
LET9060F | Package:M250;包裝:托盤 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - FET,MOSFET - 射頻 描述:MOSFET N-CH 80V 12A M-250 | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package Description The LET9060 is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broadband, commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. LET9060 boasts the excellent gain, 文件:296.25 Kbytes 頁(yè)數(shù):10 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Description The LET9060 is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broadband, commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. LET9060 boasts the excellent gain, 文件:225.91 Kbytes 頁(yè)數(shù):11 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Description The LET9060 is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broadband, commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. LET9060 boasts the excellent gain, 文件:225.91 Kbytes 頁(yè)數(shù):11 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS |
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
LET9060F
- 制造商:
STMicroelectronics
- 類別:
分立半導(dǎo)體產(chǎn)品 > 晶體管 - FET,MOSFET - 射頻
- 包裝:
托盤
- 晶體管類型:
LDMOS
- 頻率:
945MHz
- 增益:
18dB
- 額定電流(安培):
12A
- 功率 - 輸出:
75W
- 封裝/外殼:
M250
- 供應(yīng)商器件封裝:
M250
- 描述:
MOSFET N-CH 80V 12A M-250
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
STMicroelectronics |
25+ |
N/A |
21000 |
正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊 |
詢價(jià) | ||
STM |
25+ |
M250 |
26 |
就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件! |
詢價(jià) | ||
22+ |
NA |
48 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價(jià) | |||
ST |
22+ |
M250 |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
ST/意法 |
22+ |
N |
30000 |
十七年VIP會(huì)員,誠(chéng)信經(jīng)營(yíng),一手貨源,原裝正品可零售! |
詢價(jià) | ||
STMicroelectronics |
2022+ |
M250 |
38550 |
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷 |
詢價(jià) | ||
STM |
23+ |
M250 |
33500 |
原裝正品現(xiàn)貨庫(kù)存QQ:2987726803 |
詢價(jià) | ||
ST |
23+ |
M250 |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) | ||
ST |
23+ |
M250 |
7000 |
詢價(jià) | |||
STMicroelectronics |
25+ |
N/A |
21000 |
正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊 |
詢價(jià) |
相關(guān)規(guī)格書
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- LF10WBR-4S
相關(guān)庫(kù)存
更多- LET9060STR
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- LEUWQ9WP-8M7N>>
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- LEUWU1A301-8P8Q-EBVF68EBZB68-T01
- LEUWU1A501-5R8>
- LEV100A4ANH
- LEV100A5ANG
- LEV100A6ANG
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- LEV200A4ANF
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- LEV200A5ANA
- LEV200A5NAA
- LEV200A6NAA
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- LF.2020
- LF07BJ-T01
- LF07WBJ-3P
- LF07WBJ-6P
- LF07WBP-3P
- LF07WBP-6P
- LF07WBR-3P
- LF07WBR-6P
- LF0805A252R-10
- LF1005-S
- LF-10108
- LF10-6Q
- LF10BP-T01
- LF10WBJ-12S
- LF10WBJ-4S
- LF10WBP-12S
- LF10WBP-4S
- LF10WBPD-12S
- LF10WBR-12P
- LF10WBR-4P
- LF10WBRB-12P

