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    首頁 >HS-303>規(guī)格書列表

    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

    HS-303

    Radiation Hardened CMOS Dual SPDT Analog Switch

    Radiation Hardened CMOS Dual SPDT Analog Switch Intersil’s Satellite Applications FlowTM (SAF) devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended to meet the cost and shorter lead-time needs of large volume satellite

    文件:25.45 Kbytes 頁數(shù):2 Pages

    INTERSIL

    HS-303AEH

    Radiation Hardened CMOS Dual SPDT Analog Switch

    Features ? QML, per MIL-PRF-38535 ? Radiation performance ○ Total dose: 3x105rad(Si) ○ SEE: For LET = 60MeV?cm2/mg at 60° incident angle,

    文件:251.1 Kbytes 頁數(shù):7 Pages

    RENESAS

    瑞薩

    HS-303ARH

    Radiation Hardened CMOS Dual SPDT Analog Switch

    Features ? QML, per MIL-PRF-38535 ? Radiation performance ○ Total dose: 3x105rad(Si) ○ SEE: For LET = 60MeV?cm2/mg at 60° incident angle,

    文件:251.1 Kbytes 頁數(shù):7 Pages

    RENESAS

    瑞薩

    HS-303ARH

    Radiation Hardened CMOS Dual SPDT Analog Switch

    The HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH analog switches are monolithic devices fabricated using Intersil’s dielectrically isolated Radiation Hardened Silicon Gate (RSG) process technology to insure latch-up free operation. They are pinout compatible and functionally equivalent to the HS-303

    文件:93.97 Kbytes 頁數(shù):3 Pages

    INTERSIL

    HS-303BEH

    Radiation Hardened CMOS Dual SPDT Analog Switch

    Features ? QML, per MIL-PRF-38535 ? Radiation performance ○ Total dose: 3x105rad(Si) ○ SEE: For LET = 60MeV?cm2/mg at 60° incident angle,

    文件:251.1 Kbytes 頁數(shù):7 Pages

    RENESAS

    瑞薩

    HS-303BRH

    Radiation Hardened CMOS Dual SPDT Analog Switch

    Features ? QML, per MIL-PRF-38535 ? Radiation performance ○ Total dose: 3x105rad(Si) ○ SEE: For LET = 60MeV?cm2/mg at 60° incident angle,

    文件:251.1 Kbytes 頁數(shù):7 Pages

    RENESAS

    瑞薩

    HS-303CEH

    Radiation Hardened BiCMOS Dual SPDT Analog Switch

    Features ? QML, per MIL-PRF-38535 ? No latch-up, dielectrically isolated device islands ? Pinout and functionally compatible with the HS-303RH series of analog switches ? Analog signal range equal to the supply voltage range ? Low leakage: 150nA (max, post-rad) ? Low rON: 60Ω (max, post-ra

    文件:521.58 Kbytes 頁數(shù):14 Pages

    RENESAS

    瑞薩

    HS-303CEH

    Radiation Hardened BiCMOS Dual SPDT Analog Switch

    ? Qualified & Screened to DLA SMD 5962-95813 ? No latch-up, dielectrically isolated device islands ? Pinout and functionally compatible with the HS-303RH series of analog switches ? Analog signal range equal to the supply voltage range ? Low leakage: 150nA (max, post-rad) ? Low rON: 60Ω (ma

    文件:667.37 Kbytes 頁數(shù):13 Pages

    RENESAS

    瑞薩

    HS-303CEH

    Radiation Hardened BiCMOS Dual SPDT Analog Switch

    The HS-303CEH is an analog switch and a monolithic device that is fabricated using Intersil’s dielectrically isolated Radiation Hardened Silicon Gate (RSG) process technology to insure latch-up free operation. It is pinout compatible and functionally equivalent to the HS-303RH. This switch offers

    文件:476.07 Kbytes 頁數(shù):10 Pages

    INTERSIL

    HS-303CEH_V01

    Radiation Hardened BiCMOS Dual SPDT Analog Switch

    ? Qualified & Screened to DLA SMD 5962-95813 ? No latch-up, dielectrically isolated device islands ? Pinout and functionally compatible with the HS-303RH series of analog switches ? Analog signal range equal to the supply voltage range ? Low leakage: 150nA (max, post-rad) ? Low rON: 60Ω (ma

    文件:667.37 Kbytes 頁數(shù):13 Pages

    RENESAS

    瑞薩

    技術(shù)參數(shù)

    • High Dose Rate (HDR) (krad (Si)):

      300

    • Low Dose Rate (LDR) (krad (Si)):

      50

    • SMD URL:

      5962-95813

    • DLA SMD:

      5962F9581306V9A

    • Pkg. Class:

      V

    • Qualification Level:

      QML Class Q (Military)

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    更多HS-303供應(yīng)商 更新時間2026-1-22 13:51:00

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