Radiation Hardened CMOS Dual SPDT Analog Switch

Features ? QML, per MIL-PRF-38535 ? Radiation performance ○ Total dose: 3x105rad(Si) ○ SEE: For LET = 60MeV?cm2/mg at 60° incident angle,

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Radiation Hardened CMOS Dual SPDT Analog Switch

文件：201.97 Kbytes 頁數(shù)：5 Pages

INTERSIL

抗輻射 CMOS 雙 SPDT 模擬開關(guān)

The HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH analog switches are monolithic devices fabricated using Intersil’s dielectrically isolated Radiation Hardened Silicon Gate (RSG) process technology to insure latch-up free operation. They are pinout compatible and functionally equivalent to the HS-303RH ? QML, per MIL-PRF-38535 \n? Radiation performance \n? Total dose: 3x105 rad(Si) \n? SEE: For LET = 60MeV-mg/cm2 at 60° incident angle, ? No latch-up, dielectrically isolated device islands \n? Pinout and functionally compatible with Intersil HS-303RH and HI-303 series analog switches \n? Analog sig;

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Radiation Hardened CMOS Dual SPDT Analog Switch

Features ? QML, per MIL-PRF-38535 ? Radiation performance ○ Total dose: 3x105rad(Si) ○ SEE: For LET = 60MeV?cm2/mg at 60° incident angle,

文件：251.1 Kbytes 頁數(shù)：7 Pages

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Radiation Hardened CMOS Dual SPDT Analog Switch

文件：201.97 Kbytes 頁數(shù)：5 Pages

INTERSIL

Radiation Hardened BiCMOS Dual SPDT Analog Switch

Features ? QML, per MIL-PRF-38535 ? No latch-up, dielectrically isolated device islands ? Pinout and functionally compatible with the HS-303RH series of analog switches ? Analog signal range equal to the supply voltage range ? Low leakage: 150nA (max, post-rad) ? Low rON: 60Ω (max, post-ra

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