100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

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FAIRCHILD

仙童半導體

100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

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INTERSIL

100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as s ? 100A, 55V (See Note)\n? Low On-Resistance, rDS(ON) = 0.008?\n? Temperature Compensating PSPICE? Model\n? Thermal Impedance SPICE Model\n? UIS Rating Curve\n? Related Literature\n?? - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”;

ONSEMI

安森美半導體

N-Channel MOSFET Transistor

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ISC

無錫固電

N-Channel MOSFET Transistor

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ISC

無錫固電

Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the

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IRF