Silicon Schottky Barrier Diode for Rectifying

Features ? Low forward voltage drop and suitable for high effifiency rectifying. ? DO-214 is suitable for high density surface mounting and high speed assembly.

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HITACHIHitachi Semiconductor

日立日立公司

Silicon Schottky Barrier Diode for Rectifying

? Low forward voltage drop and suitable for high effifiency rectifying.\n? DO-214 is suitable for high density surface mounting and high speed assembly.;

HITACHI

日立

GaAs 0.5-6GHz DPDT Switch

Description The HWS503 is a GaAs PHEMT MMIC DPDT switch operating at 0.5-6 GHz in a miniature USON6L (1.5 x 1.5 x 0.4mm) plastic lead (Pb) free package. The HWS503 features low insertion loss and high isolation with very low DC power consumption. This switch can be used in IEEE 802.11a/b/

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HW

漢威光電

Ultra-Miniature 5W Single & Dual Output DC/DC Converters

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MPD

4:1 Input, 5W Ultra-Miniature DC/DC Converters

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MPD