Silicon Schottky Barrier Diode for Rectifying

Features ? Good for high-frequency rectify. ? LRP structure ensures higher reliability.

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HITACHIHitachi Semiconductor

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100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

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INTERSIL

100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

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FAIRCHILD

仙童半導(dǎo)體

100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

文件：191.09 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

文件：82.73 Kbytes 頁數(shù)：8 Pages

INTERSIL

isc N-Channel MOSFET Transistor

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ISC

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Silicon Schottky Barrier Diode for Rectifying

HITACHI

日立

100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as s ? 100A, 55V (See Note)\n? Low On-Resistance, rDS(ON) = 0.008?\n? Temperature Compensating PSPICE? Model\n? Thermal Impedance SPICE Model\n? UIS Rating Curve\n? Related Literature\n?? - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”;

ONSEMI

安森美半導(dǎo)體

100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs

ONSEMI

安森美半導(dǎo)體