| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
HM64 | PNP EPITAXIAL PLANAR TRANSISTOR Description The HM64 is a darlington amplifier transistor designed for applications requiring extremely high current gain. Features ? High D.C current gain ? HM64 is complementary to HM14 文件:30.83 Kbytes 頁數(shù):3 Pages | HSMC 華昕 | HSMC | |
HM64 | Micropower Low Profile Surface Mount Inductors Micropower Low Profile Surface Mount Inductors ? Operating Temperature Range -40°C to +125°C 文件:601.53 Kbytes 頁數(shù):2 Pages | BITECH | BITECH | |
the silicon N-channel Enhanced VDMOSFETs Description HM640, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization 文件:935.87 Kbytes 頁數(shù):10 Pages | HMSEMI 華之美半導(dǎo)體 | HMSEMI | ||
絲印:6408;Package:SOT-23-6L;N-Channel Enhancement Mode Power MOSFET Description The HM6408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. Features ● VDS = 20V,ID = 5.5A RDS(ON) 文件:1.1278 Mbytes 頁數(shù):7 Pages | HMSEMI 華之美半導(dǎo)體 | HMSEMI | ||
絲?。?a target="_blank" title="Marking" href="/6409/marking.html">6409;Package:SOT-23-6L;P-Channel Enhancement Mode Power MOSFET Description The HM6409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Features ● VDS = -20V,ID = -5.0A RDS(ON) 文件:1.0131 Mbytes 頁數(shù):7 Pages | HMSEMI 華之美半導(dǎo)體 | HMSEMI | ||
20V P-Channel Enhancement-Mode MOSFET VDS= -20V RDS(ON), Vgs @ - 1.8V, Ids @ - 2.0 A = 73m? RDS(ON), Vgs @ - 2.5V, Ids @ - 4.0 A = 54m? RDS(ON), Vgs @ - 4.5V, Ids @ - 5.5 A = 43m? Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions 文件:344.16 Kbytes 頁數(shù):3 Pages | HMSEMI 華之美半導(dǎo)體 | HMSEMI | ||
Micropower Low Profile Surface Mount Inductors Micropower Low Profile Surface Mount Inductors ? Operating Temperature Range -40°C to +125°C 文件:601.53 Kbytes 頁數(shù):2 Pages | BITECH | BITECH | ||
Micropower Low Profile Surface Mount Inductors Micropower Low Profile Surface Mount Inductors ? Operating Temperature Range -40°C to +125°C 文件:601.53 Kbytes 頁數(shù):2 Pages | BITECH | BITECH | ||
Micropower Low Profile Surface Mount Inductors Micropower Low Profile Surface Mount Inductors ? Operating Temperature Range -40°C to +125°C 文件:601.53 Kbytes 頁數(shù):2 Pages | BITECH | BITECH | ||
Micropower Low Profile Surface Mount Inductors Micropower Low Profile Surface Mount Inductors ? Operating Temperature Range -40°C to +125°C 文件:601.53 Kbytes 頁數(shù):2 Pages | BITECH | BITECH |
技術(shù)參數(shù)
- 封裝(Package):
TO-220
- 溝道(Polarity):
N溝道
- VDS(Max)BVDSS(V):
200.00V
- ID(Max)ID(A):
18.00A
- IDM:
72.00A
- VTH(Typ):
3.00V
- VGS:
30.00V
- RDS(ON)@-10VTyp(mΩ):
0.12mΩ
- RDS(ON)@-4.5VTyp(mΩ):
0.00mΩ
- RDS(ON)@-2.5VTyp(mΩ):
0.00mΩ
- 直接替代型號(compatible):
IRF640
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
HIT |
02+ |
QFP48 |
2245 |
全新原裝進口自己庫存優(yōu)勢 |
詢價 | ||
HIT |
24+ |
QFP |
153 |
詢價 | |||
HIT |
25+ |
QFP |
2309 |
品牌專業(yè)分銷商,可以零售 |
詢價 | ||
H |
24+ |
TO-220AB |
5000 |
只做原裝公司現(xiàn)貨 |
詢價 | ||
HIT |
17+ |
QFP48 |
9988 |
全新原裝現(xiàn)貨QQ:547425301手機17621633780楊小姐 |
詢價 | ||
HIT |
25+ |
SIP |
2987 |
只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電! |
詢價 | ||
BGA |
110 |
詢價 | |||||
HZM |
24+ |
SOT26 |
326295 |
專業(yè)代理LDO穩(wěn)壓IC公司優(yōu)勢產(chǎn)品 |
詢價 | ||
RENESAS/瑞薩 |
2447 |
QFP |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
HM |
24+ |
SOT-23-6L |
9600 |
原裝現(xiàn)貨,優(yōu)勢供應(yīng),支持實單! |
詢價 |
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