the silicon N-channel Enhanced VDMOSFETs

Description HM640, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization

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HMSEMI

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高壓MOS

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絲印：6408；Package：SOT-23-6L；N-Channel Enhancement Mode Power MOSFET

Description The HM6408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. Features ● VDS = 20V,ID = 5.5A RDS(ON)

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HMSEMI

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絲?。?a target="_blank" title="Marking" href="/6409/marking.html">6409；Package：SOT-23-6L；P-Channel Enhancement Mode Power MOSFET

Description The HM6409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Features ● VDS = -20V,ID = -5.0A RDS(ON)

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HMSEMI

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20V P-Channel Enhancement-Mode MOSFET

VDS= -20V RDS(ON), Vgs @ - 1.8V, Ids @ - 2.0 A = 73m? RDS(ON), Vgs @ - 2.5V, Ids @ - 4.0 A = 54m? RDS(ON), Vgs @ - 4.5V, Ids @ - 5.5 A = 43m? Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions

文件：344.16 Kbytes 頁數(shù)：3 Pages

HMSEMI

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N溝道 低壓MOS

HmpowerSemi

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P溝道 低壓MOS

HmpowerSemi

虹美功率