絲印：HFP；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 4000Watts

FEATURES Peak power dissipation 4000w @10 x 1000 us Pulse Low profile package. Excellent clamping capability. Typical IR less than 2uA when VBR above 12V. Glass passivated junction. Fast response time: typically less than 1.0ps from 0 Volts to BV min IEC 61000-4-2 ESD 30KV(Air), 30KV(Conta

文件：668.54 Kbytes 頁數(shù)：5 Pages

YFWDIODE

佑風(fēng)微

絲?。?strong>HFP；Package：DO-214AB；SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE

Features Uni- and Bi-Directional Versions Available Excellent Clamping Capability Fast Response Time Classification Rating 94V-O Glass Passivated Die Construction Plastic Case Material has UL Flammability

文件：204.1 Kbytes 頁數(shù)：5 Pages

SUNMATE

森美特

絲?。?strong>HFP；Package：SMC；SMLJ Transient Voltage Suppressor Diode Series

Features RoHS compliant* Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 3000 watts Typical temperature coefficient: ΔVBR = 0.1 x VBR @ 25 °C x ΔT Applications IEC 61000-4-2 ESD (Min. Level 4) IEC 61000-4-4 EFT IEC 61000-4-5 Surge

文件：182.78 Kbytes 頁數(shù)：6 Pages

BOURNS

伯恩斯

絲?。?strong>HFP；Package：DO-214AB；3000W Surface Mount Transient Voltage Suppressors

文件：609.41 Kbytes 頁數(shù)：4 Pages

BYTESONIC

松浩電子

絲?。?a target="_blank" title="Marking" href="/hfpq/marking.html">HFPQ；Package：SMLJ；Transient Voltage Suppressor Diode Series

文件：352.35 Kbytes 頁數(shù)：5 Pages

BOURNS

伯恩斯

Soil Heat Flux Plate

Benefits and Features Compatible with most Campbell Scientific dataloggers Compatible with the CWS900-series interfaces, allowing it to be used in a wireless sensor network Technical Description The HFPO1 uses a thermopile to measure temperature gradients across its plate. Operating in a c

文件：324.96 Kbytes 頁數(shù)：1 Pages

CAMPBELL

N-Channel Enhancement Mode Field Effect Transistor

General Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy

文件：506.34 Kbytes 頁數(shù)：6 Pages

HUASHAN

華汕電子器件

500V N-Channel MOSFET

FEATURES ? Originative New Design ? Superior Avalanche Rugged Technology ? Robust Gate Oxide Technology ? Very Low Intrinsic Capacitances ? Excellent Switching Characteristics ? Unrivalled Gate Charge : 38 nC (Typ.) ? Extended Safe Operating Area ? Lower RDS(ON) : 0.39 Ω (Typ.) @VGS=10V ?

文件：946.97 Kbytes 頁數(shù)：8 Pages

SEMIHOW

Superior Avalanche Rugged Technology

FEATURES ? Originative New Design ? Superior Avalanche Rugged Technology ? Robust Gate Oxide Technology ? Very Low Intrinsic Capacitances ? Excellent Switching Characteristics ? Unrivalled Gate Charge : 34 nC (Typ.) ? Extended Safe Operating Area ? Lower RDS(ON) : 0.39 Ω (Typ.) @vGS=10V ?

文件：169.33 Kbytes 頁數(shù)：8 Pages

SEMIHOW

N-Channel Enhancement Mode Field Effect Transistor

Features ? 15A, 60V(See Note), RDS(on)

文件：362.08 Kbytes 頁數(shù)：5 Pages

HUASHAN

華汕電子器件