絲印：HFP；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 4000Watts

FEATURES Peak power dissipation 4000w @10 x 1000 us Pulse Low profile package. Excellent clamping capability. Typical IR less than 2uA when VBR above 12V. Glass passivated junction. Fast response time: typically less than 1.0ps from 0 Volts to BV min IEC 61000-4-2 ESD 30KV(Air), 30KV(Conta

文件：668.54 Kbytes 頁數(shù)：5 Pages

YFWDIODE

佑風微

絲印：HFP；Package：DO-214AB；SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE

Features Uni- and Bi-Directional Versions Available Excellent Clamping Capability Fast Response Time Classification Rating 94V-O Glass Passivated Die Construction Plastic Case Material has UL Flammability

文件：204.1 Kbytes 頁數(shù)：5 Pages

SUNMATE

森美特

絲?。?strong>HFP；Package：SMC；SMLJ Transient Voltage Suppressor Diode Series

Features RoHS compliant* Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 3000 watts Typical temperature coefficient: ΔVBR = 0.1 x VBR @ 25 °C x ΔT Applications IEC 61000-4-2 ESD (Min. Level 4) IEC 61000-4-4 EFT IEC 61000-4-5 Surge

文件：182.78 Kbytes 頁數(shù)：6 Pages

BOURNS

伯恩斯

絲印：HFP；Package：DO-214AB；3000W Surface Mount Transient Voltage Suppressors

文件：609.41 Kbytes 頁數(shù)：4 Pages

BYTESONIC

松浩電子

絲印：HFPQ；Package：SMLJ；Transient Voltage Suppressor Diode Series

文件：352.35 Kbytes 頁數(shù)：5 Pages

BOURNS

伯恩斯

Soil Heat Flux Plate

Benefits and Features Compatible with most Campbell Scientific dataloggers Compatible with the CWS900-series interfaces, allowing it to be used in a wireless sensor network Technical Description The HFPO1 uses a thermopile to measure temperature gradients across its plate. Operating in a c

文件：324.96 Kbytes 頁數(shù)：1 Pages

CAMPBELL

N-Channel Enhancement Mode Field Effect Transistor

General Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy

文件：506.34 Kbytes 頁數(shù)：6 Pages

HUASHAN

華汕電子器件

500V N-Channel MOSFET

FEATURES ? Originative New Design ? Superior Avalanche Rugged Technology ? Robust Gate Oxide Technology ? Very Low Intrinsic Capacitances ? Excellent Switching Characteristics ? Unrivalled Gate Charge : 38 nC (Typ.) ? Extended Safe Operating Area ? Lower RDS(ON) : 0.39 Ω (Typ.) @VGS=10V ?

文件：946.97 Kbytes 頁數(shù)：8 Pages

SEMIHOW

Superior Avalanche Rugged Technology

FEATURES ? Originative New Design ? Superior Avalanche Rugged Technology ? Robust Gate Oxide Technology ? Very Low Intrinsic Capacitances ? Excellent Switching Characteristics ? Unrivalled Gate Charge : 34 nC (Typ.) ? Extended Safe Operating Area ? Lower RDS(ON) : 0.39 Ω (Typ.) @vGS=10V ?

文件：169.33 Kbytes 頁數(shù)：8 Pages

SEMIHOW

N-Channel Enhancement Mode Field Effect Transistor

Features ? 15A, 60V(See Note), RDS(on)

文件：362.08 Kbytes 頁數(shù)：5 Pages

HUASHAN

華汕電子器件