絲印：HFE；SILICON TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES ? Complementary to 2SC1623 ? High DC Current Gain: hFE = 200 TYP. (VCE = ?6.0 V, IC = ?1.0 mA) ? High Voltage: VCEO = ?50 V ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO ?60 V Collector to Emitter Voltage VCEO ?50

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絲?。?strong>HFE；SILICON TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES ? Complementary to 2SC1623A ? High DC Current Gain: hFE = 200 TYP. (VCE = ?6.0 V, IC = ?1.0 mA) ? High Voltage: VCEO = ?50 V ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO ?60 V Collector to Emitter Voltage VCEO ?50

文件：390.7 Kbytes 頁數(shù)：6 Pages

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絲?。?strong>HFE；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 4000Watts

FEATURES Peak power dissipation 4000w @10 x 1000 us Pulse Low profile package. Excellent clamping capability. Typical IR less than 2uA when VBR above 12V. Glass passivated junction. Fast response time: typically less than 1.0ps from 0 Volts to BV min IEC 61000-4-2 ESD 30KV(Air), 30KV(Conta

文件：668.54 Kbytes 頁數(shù)：5 Pages

YFWDIODE

佑風(fēng)微

絲?。?strong>HFE；Package：DO-214AB；SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE

Features Uni- and Bi-Directional Versions Available Excellent Clamping Capability Fast Response Time Classification Rating 94V-O Glass Passivated Die Construction Plastic Case Material has UL Flammability

文件：204.1 Kbytes 頁數(shù)：5 Pages

SUNMATE

森美特

絲印：HFE；Package：SMC；SMLJ Transient Voltage Suppressor Diode Series

Features RoHS compliant* Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 3000 watts Typical temperature coefficient: ΔVBR = 0.1 x VBR @ 25 °C x ΔT Applications IEC 61000-4-2 ESD (Min. Level 4) IEC 61000-4-4 EFT IEC 61000-4-5 Surge

文件：182.78 Kbytes 頁數(shù)：6 Pages

BOURNS

伯恩斯

絲?。?strong>hFE；Package：SOT-89；Silicon NPN Epitaxial

文件：56.5 Kbytes 頁數(shù)：1 Pages

KEXIN

科信電子

絲印：HFE；Package：DO-214AB；3000W Surface Mount Transient Voltage Suppressors

文件：609.41 Kbytes 頁數(shù)：4 Pages

BYTESONIC

松浩電子

絲?。?a target="_blank" title="Marking" href="/hfe2/marking.html">HFE2；Package：TO-252；SILICON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING DESCRIPTION The 2SA1648 is a mold power transistor developed for high-speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, moto

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絲?。?a target="_blank" title="Marking" href="/hfe2/marking.html">HFE2；Package：TO-252；SILICON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

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絲?。?a target="_blank" title="Marking" href="/hfe2/marking.html">HFE2；Package：TO-220AB；SILICON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1645 is a mold power transistor developed for highspeed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, so

文件：266.09 Kbytes 頁數(shù)：8 Pages

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