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                >HFA>規(guī)格書列表
                
    
            
    
                
    
                    
    型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO
    
                    
    HFA1412IPZ
    絲?。?a target="_blank" title="Marking" href="/hfa1412ipz/marking.html">HFA1412IPZ；Package：PDIP；Quad, 350MHz, Low Power, Programmable Gain Buffer Amplifier
    
Features
? User Programmable For Closed-Loop Gains of +1, -1 or
+2 Without Use of External Resistors
? Wide -3dB Bandwidth. . . . . . . . . . . . . . . . . . . . . . 350MHz
? Low Supply Current . . . . . . . . . . . . . . . . . . . . 6mA/Buffer
? Excellent Gain Flatness (to 100MHz). . . . . .
    文件：738.94 Kbytes 頁數(shù)：13 Pages
    RENESAS
    瑞薩
    

    HFA3046BZ
    絲?。?a target="_blank" title="Marking" href="/hfa3046bz/marking.html">HFA3046BZ；Package：14LdSOIC；Ultra High Frequency Transistor Arrays
    
The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation’s complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibi
    文件：699.33 Kbytes 頁數(shù)：14 Pages
    RENESAS
    瑞薩
    

    HFA3046BZ
    絲印：HFA3046BZ；Package：14LDSOIC；Ultra High Frequency Transistor Arrays
    
Features
? NPN transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz
? NPN current gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 130
? NPN early voltage (VA). . . . . . . . . . . . . . . . . . . . . . . . 50V
? PNP transistor (fT) . . . . . . . . . . . . . . . .
    文件：790.14 Kbytes 頁數(shù)：16 Pages
    RENESAS
    瑞薩
    

    HFA3096BZ
    絲?。?a target="_blank" title="Marking" href="/hfa3096bz/marking.html">HFA3096BZ；Package：16LDSOIC；Ultra High Frequency Transistor Arrays
    
Features
? NPN transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz
? NPN current gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 130
? NPN early voltage (VA). . . . . . . . . . . . . . . . . . . . . . . . 50V
? PNP transistor (fT) . . . . . . . . . . . . . . . .
    文件：790.14 Kbytes 頁數(shù)：16 Pages
    RENESAS
    瑞薩
    

    HFA3096BZ
    絲?。?a target="_blank" title="Marking" href="/hfa3096bz/marking.html">HFA3096BZ；Package：16LdSOIC；Ultra High Frequency Transistor Arrays
    
The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation’s complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibi
    文件：699.33 Kbytes 頁數(shù)：14 Pages
    RENESAS
    瑞薩
    

    HFA3096BZ96
    絲?。?a target="_blank" title="Marking" href="/hfa3096bz/marking.html">HFA3096BZ；Package：16LDSOIC；Ultra High Frequency Transistor Arrays
    
Features
? NPN transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz
? NPN current gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 130
? NPN early voltage (VA). . . . . . . . . . . . . . . . . . . . . . . . 50V
? PNP transistor (fT) . . . . . . . . . . . . . . . .
    文件：790.14 Kbytes 頁數(shù)：16 Pages
    RENESAS
    瑞薩
    

    HFA3127BZ
    絲?。?a target="_blank" title="Marking" href="/hfa3127bz/marking.html">HFA3127BZ；Package：16LDSOIC；Ultra High Frequency Transistor Arrays
    
Features
? NPN transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz
? NPN current gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 130
? NPN early voltage (VA). . . . . . . . . . . . . . . . . . . . . . . . 50V
? PNP transistor (fT) . . . . . . . . . . . . . . . .
    文件：790.14 Kbytes 頁數(shù)：16 Pages
    RENESAS
    瑞薩
    

    HFA3127BZ
    絲?。?a target="_blank" title="Marking" href="/hfa3127bz/marking.html">HFA3127BZ；Package：16LdSOIC；Ultra High Frequency Transistor Arrays
    
The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation’s complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibi
    文件：699.33 Kbytes 頁數(shù)：14 Pages
    RENESAS
    瑞薩
    

    HFA3127BZ96
    絲印：HFA3127BZ；Package：16LDSOIC；Ultra High Frequency Transistor Arrays
    
Features
? NPN transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz
? NPN current gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 130
? NPN early voltage (VA). . . . . . . . . . . . . . . . . . . . . . . . 50V
? PNP transistor (fT) . . . . . . . . . . . . . . . .
    文件：790.14 Kbytes 頁數(shù)：16 Pages
    RENESAS
    瑞薩
    

    HFA3128BZ
    絲?。?a target="_blank" title="Marking" href="/hfa3128bz/marking.html">HFA3128BZ；Package：16LDSOIC；Ultra High Frequency Transistor Arrays
    
Features
? NPN transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz
? NPN current gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 130
? NPN early voltage (VA). . . . . . . . . . . . . . . . . . . . . . . . 50V
? PNP transistor (fT) . . . . . . . . . . . . . . . .
    文件：790.14 Kbytes 頁數(shù)：16 Pages
    RENESAS
    瑞薩
    

    
            
    
		
        
    
            
    
                
    技術(shù)參數(shù)
    
            
    
            
      
            	
    • Vc(V)：
      85
    • It(mA)：
      1
    • Ipp(A)：
      3000
    • Ir(μA)：
      20
    
            
    
        
    
            
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    25
    		

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    6000
    		

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    INTERSIL
    		

    22+
    		

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    MODLE
    		

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    VISHAY/威世
    		

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    INTERSIL
    		

    21+
    		

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            更新時(shí)間2026-1-22 8:48:00
        
    
        
    
          
    
            
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