Dual 2-wide 2-input AND-OR-invert gate

DESCRIPTION The HEF4085B is a dual 2-wide 2-input AND-OR-invert gate, each with an additional input (A4 or B4) which can be used as either an expander input or an inhibit input. A HIGH on A4 or B4 forces the output (OA or OB) LOW independent of the other inputs (A0 to A3 or B0 to B3). The outputs

文件：29.11 Kbytes 頁數(shù)：3 Pages

PHI

PHI

Dual 2-wide 2-input AND-OR-invert gate

DESCRIPTION The HEF4085B is a dual 2-wide 2-input AND-OR-invert gate, each with an additional input (A4 or B4) which can be used as either an expander input or an inhibit input. A HIGH on A4 or B4 forces the output (OA or OB) LOW independent of the other inputs (A0 to A3 or B0 to B3). The outputs

文件：29.11 Kbytes 頁數(shù)：3 Pages

PHI

PHI

Switch type 2/3/4 lithium ion/lithium polymer charge management chip

文件：670.69 Kbytes 頁數(shù)：10 Pages

HMSEMI

華之美半導(dǎo)體

PDP TRENCH IGBT

Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperatu

文件：768.71 Kbytes 頁數(shù)：7 Pages

IRF