500 mW Zener Diode 1.7 to 37.2 Volts

Features ? Low Leakage ? Low Zener Impedance ? High Reliability

文件：108.27 Kbytes 頁(yè)數(shù)：4 Pages

MCC

128Mb (2Mx4Banks×16) DDR SDRAM

The H2A21281643B is high speed Synchronous graphic RAM fabricated with ultra high performance CMOS process containing 134,217,728 bits which organized as 2Meg words x 4 banks by 16 bits.\nThe 128Mb DDR SDRAM uses a double data rate architecture to accomplish high-speed operation. The data path inter \n? 2.5V ± 0.2V Power Supply for DDR400/333 \n? Double Data Rate architecture; two data transfers per clock cycle \n? Differential clock inputs (CLK and /CLK ) \n? DQS is edge-aligned with data for Read; center-aligned with data for Write \n? CAS Latency: 2, 2.5 and 3 \n? Burst Length: 2, 4 and 8 \n;

Axeme

256Mb (4Mx4Banks×16) DDR SDRAM

The H2A22561643B is high speed Synchronous graphic RAM fabricated with ultra high performance CMOS process containing 256M bits which organized as 4Mega words x 4 banks by 16 bits.\nThe 256Mb DDR SDRAM uses a double data rate architecture to accomplish high-speed operation. The data path internally \n? 2.5V ± 0.2V Power Supply for DDR 400 / 333 \n? Up to 250 MHz Clock Frequency \n? Double Data Rate architecture; two data transfers per clock cycle \n? Differential clock inputs (CLK and /CLK ) \n? DQS is edge-aligned with data for Read; center-aligned with data for Write \n? CAS Latency: 2, 2.5 ;

Axeme

Space-saving Plug-in Signal Conditioners H-UNIT

文件：108.5 Kbytes 頁(yè)數(shù)：3 Pages

MSYSTEM

愛模

Space-saving Plug-in Signal Conditioners H-UNIT

文件：108.5 Kbytes 頁(yè)數(shù)：3 Pages

MSYSTEM

愛模

Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply

Features ? Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. ? Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.

文件：45.1 Kbytes 頁(yè)數(shù)：8 Pages

HITACHIHitachi Semiconductor

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