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          首頁 >H2A3>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          H2A3

          500 mW Zener Diode 1.7 to 37.2 Volts

          Features ? Low Leakage ? Low Zener Impedance ? High Reliability

          文件:108.27 Kbytes 頁數(shù):4 Pages

          MCC

          H2A3-H530

          High Power single chip LED

          文件:289.45 Kbytes 頁數(shù):4 Pages

          ROITHNER

          H2A3-H625

          High Power single chip LED

          文件:289.36 Kbytes 頁數(shù):4 Pages

          ROITHNER

          H2A302G0856B

          2Gb (32Mx8Banks×8) DDR2 SDRAM

          The H2A302G0856B is a high speed Double Date Rate 2 (DDR2) Synchronous DRAM fabricated with ultra high performance CMOS process containing 2G bits which organized as 32Mbits x 8 banks by 8 bits.\nThis synchronous device achieves high speed double-data-rate transfer rates of up to 1066 Mb/sec/pin (DD \n? All inputs and outputs are compatible with SSTL_18 interface. \n? EightBanks \n? Bust length: 4 and 8. \n? Programmable Additive Latency (AL):0, 1, 2, 3, 4, 5 \n? Read Latency (RL) = Programmable Additive Latency (AL) + CAS Latency (CL) \n? Data inputs on DQS centers when write. \n? On chip DLL ;

          Axeme

          Axeme

          H2A31281656B

          128Mb (2Mx4Banks×16) DDR2 SDRAM

          The H2A31281656B is a 128M bits DDR2 SDRAM, organized as 2,097,152words x 4 banks x 16 bits. The -25 grade parts are compliant to the DDR2 800 (6-6-6) specification . The -3 grade parts is compliant to the DDR2-667 (5-5-5) specification.\nJEDEC specifications require the refresh rate to double when \n? Power Supply: VDD, VDDQ = 1.8 V ± 0.1V \n? Double Data Rate architecture: two data transfers per clock cycle \n? Burst Length: 4 and 8 \n? Bi-directional, differential data strobes (DQS and DQS ) are transmitted / received with data \n? Edge-aligned with Read data and center-aligned with Write d;

          Axeme

          Axeme

          H2A35121656B

          512Mb (8Mx4Banks×16) DDR2 SDRAM

          The H2A35121656B is a high speed Double Date Rate 2 (DDR2) Synchronous DRAM fabricated with ultra high performance CMOS process containing 536,870,912 bits which organized as 8Mbits x 4 banks by 16 bits. This synchronous device achieves high speed double-data-rate transfer rates of up to 1066 Mb/sec \n? All inputs and outputs are compatible with SSTL_18 interface. \n? Four Banks \n? Bust length: 4 and 8. ? Programmable CAS Latency (CL): 3, 4, 5, 6 & 7. \n? Write Latency (WL) =Read Latency (RL) -1. \n? Bi-directional Differential Data Strobe (DQS). \n? Data outputs on DQS, /DQS edges when read.;

          Axeme

          Axeme

          技術(shù)參數(shù)

          • Density:

            1Gb

          • Organization:

            64Mb x 16

          • Voltage:

            1.8V

          • Package:

            FBGA-84

          供應(yīng)商型號品牌批號封裝庫存備注價格
          AXEME
          24+
          BGA
          66800
          原廠授權(quán)一級代理,專注汽車、醫(yī)療、工業(yè)、新能源!
          詢價
          AXEME
          23+
          BGA
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價
          AXEME
          23+
          BGA
          12670
          原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
          詢價
          HYUNDAI
          NA
          8560
          一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
          詢價
          AXEME
          16+
          BGA
          21000
          深圳現(xiàn)貨,價格優(yōu)勢,實單可談,支持實單,
          詢價
          MGA002AH
          2023+環(huán)?,F(xiàn)貨
          PLCC
          50
          專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù)
          詢價
          AXEME
          23+
          BGA
          6500
          專注配單,只做原裝進口現(xiàn)貨
          詢價
          華聆寶業(yè)
          22+
          30000
          只做原裝正品
          詢價
          AXEME
          24+
          BGA
          50945
          只做全新原裝進口現(xiàn)貨
          詢價
          AXEME
          24+
          BGA
          60000
          詢價
          更多H2A3供應(yīng)商 更新時間2026-1-19 11:08:00
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