絲?。?a target="_blank" title="Marking" href="/gc11n70/marking.html">GC11N70；Package：TO-220F；N-Channel Enhancement Mode Power MOSFET

Description The GC11N70F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：765.67 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/gc11n70/marking.html">GC11N70；Package：TO-220F；Power Factor Correction (PFC)

Description The GC11N70 uses advanced super junction technology and design to provide excellent RDS(ON) and low gate charge. This device is suitable for industry AC-DC SMPS requirement of PFC, AC/DC power conversion, and other industrial power application. Application ● Power Factor Corre

文件：2.47652 Mbytes 頁數(shù)：9 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/gc11n70/marking.html">GC11N70；Package：TO-251；Power Factor Correction (PFC)

Description The GC11N70 uses advanced super junction technology and design to provide excellent RDS(ON) and low gate charge. This device is suitable for industry AC-DC SMPS requirement of PFC, AC/DC power conversion, and other industrial power application. Application ● Power Factor Corre

文件：2.47652 Mbytes 頁數(shù)：9 Pages

GOFORD

谷峰半導(dǎo)體

絲印：GC11N70；Package：TO-252；Power Factor Correction (PFC)

Description The GC11N70 uses advanced super junction technology and design to provide excellent RDS(ON) and low gate charge. This device is suitable for industry AC-DC SMPS requirement of PFC, AC/DC power conversion, and other industrial power application. Application ● Power Factor Corre

文件：2.47652 Mbytes 頁數(shù)：9 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/gc11n70/marking.html">GC11N70；Package：TO-220；Power Factor Correction (PFC)

Description The GC11N70 uses advanced super junction technology and design to provide excellent RDS(ON) and low gate charge. This device is suitable for industry AC-DC SMPS requirement of PFC, AC/DC power conversion, and other industrial power application. Application ● Power Factor Corre

文件：2.47652 Mbytes 頁數(shù)：9 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/gc120n65/marking.html">GC120N65；Package：TO-247；N-Channel Enhancement Mode Power MOSFET

Description The GC120N65QF uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.14606 Mbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/gc125n65f/marking.html">GC125N65F；Package：TO-220F；N-Channel Enhancement Mode Power MOSFET

Description The GC125N65FF uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：970.83 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

ENHANCED PERFORMANCE SURFACE MOUNT EPSM PACKAGED DEVICES

DESCRIPTION Our EPSM packaged devices are designed for the most demanding commercial and Military requirements where the inconsistent performance inherent in plastic surface mount packages cannot be tolerated. These package styles extend the surface mount construction format to 6 GHz for high per

文件：290.19 Kbytes 頁數(shù)：4 Pages

MICROSEMI

美高森美

ENHANCED PERFORMANCE SURFACE MOUNT EPSM PACKAGED DEVICES

DESCRIPTION Our EPSM packaged devices are designed for the most demanding commercial and Military requirements where the inconsistent performance inherent in plastic surface mount packages cannot be tolerated. These package styles extend the surface mount construction format to 6 GHz for high per

文件：290.19 Kbytes 頁數(shù)：4 Pages

MICROSEMI

美高森美

ENHANCED PERFORMANCE SURFACE MOUNT EPSM PACKAGED DEVICES

DESCRIPTION Our EPSM packaged devices are designed for the most demanding commercial and Military requirements where the inconsistent performance inherent in plastic surface mount packages cannot be tolerated. These package styles extend the surface mount construction format to 6 GHz for high per

文件：290.19 Kbytes 頁數(shù)：4 Pages

MICROSEMI

美高森美