絲印：GC11N60；Package：TO-252；Power Factor Correction (PFC)

Description The GC11N60 uses advanced super junction technology and design to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for industry’s AC-DC SMPS requirement for PFC, AC/DC power conversion, and industrial power application. Ap

文件：4.32953 Mbytes 頁數(shù)：7 Pages

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絲?。?a target="_blank" title="Marking" href="/gc11n60/marking.html">GC11N60；Package：TO-252；Power Factor Correction

Description The GC11N60 uses advanced super junction technology and design to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for industry’s AC-DC SMPS requirement for PFC, AC/DC power conversion, and industrial power application. Ap

文件：4.32953 Mbytes 頁數(shù)：7 Pages

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谷峰半導(dǎo)體

絲印：GC11N60；Package：TO-220；Power Factor Correction

Description The GC11N60 uses advanced super junction technology and design to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for industry’s AC-DC SMPS requirement for PFC, AC/DC power conversion, and industrial power application. Ap

文件：4.32953 Mbytes 頁數(shù)：7 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/gc11n60/marking.html">GC11N60；Package：TO-220；Power Factor Correction (PFC)

Description The GC11N60 uses advanced super junction technology and design to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for industry’s AC-DC SMPS requirement for PFC, AC/DC power conversion, and industrial power application. Ap

文件：4.32953 Mbytes 頁數(shù)：7 Pages

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谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/gc11n65/marking.html">GC11N65；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description The GC11N65D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：792.54 Kbytes 頁數(shù)：6 Pages

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絲?。?a target="_blank" title="Marking" href="/gc11n65/marking.html">GC11N65；Package：TO-220F；N-Channel Enhancement Mode Power MOSFET

Description The GC11N65F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：783.72 Kbytes 頁數(shù)：6 Pages

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絲?。?a target="_blank" title="Marking" href="/gc11n65/marking.html">GC11N65；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The GC11N65K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：742.8 Kbytes 頁數(shù)：6 Pages

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絲印：GC11N65；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GC11N65M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.01237 Mbytes 頁數(shù)：6 Pages

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絲印：GC11N65；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GC11N65MA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.28811 Mbytes 頁數(shù)：6 Pages

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絲?。?a target="_blank" title="Marking" href="/gc11n65/marking.html">GC11N65；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GC11N65T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.07184 Mbytes 頁數(shù)：6 Pages

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谷峰半導(dǎo)體