絲印：GB6；Package：DSBGA；LM4930 Boomer? Audio Power Amplifier Series Audio Subsystem with Stereo Headphone & Mono Speaker Amplifiers

1FEATURES 23? 16-bit Resolution 48kHz Stereo DAC ? 16-bit Resolution 8kHz Voice Codec ? I2S Digital Audio Data Serial Interface ? Two-wire Serial Control Interface ? PCM Voice Audio Data Serial Interface ? 25mW/channel Stereo Headphone Amplifier ? 330mW Mono 8Ω Amplifier (at AVDD = 3.0V) ?

文件：897.75 Kbytes 頁數(shù)：40 Pages

TI

德州儀器

絲?。?strong>GB6；Package：DSBGA；LM4930 Boomer? Audio Power Amplifier Series Audio Subsystem with Stereo Headphone & Mono Speaker Amplifiers

1FEATURES 23? 16-bit Resolution 48kHz Stereo DAC ? 16-bit Resolution 8kHz Voice Codec ? I2S Digital Audio Data Serial Interface ? Two-wire Serial Control Interface ? PCM Voice Audio Data Serial Interface ? 25mW/channel Stereo Headphone Amplifier ? 330mW Mono 8Ω Amplifier (at AVDD = 3.0V) ?

文件：897.75 Kbytes 頁數(shù)：40 Pages

TI

德州儀器

絲?。?strong>GB6；Package：SMA；60 V, 1 A low drop power Schottky rectifier

Features ? Negligible switching losses ? Low forward voltage drop ? Surface mount miniature packages ? Avalanche rated ? ECOPACK2 compliant

文件：416.38 Kbytes 頁數(shù)：19 Pages

STMICROELECTRONICS

意法半導體

絲印：GB6；Package：SSOP6-P-0.65A；Dual Inverter (Un-Buffer)

Features ? High output current: ±8 mA (min) at VCC = 3.0 V ? Super high speed operation: tpd = 1.9 ns (typ.) at VCC = 3.3 V, 15 pF ? Operating voltage range: VCC = 0.9 to 3.6 V ? 3.6-V tolerant inputs

文件：276.58 Kbytes 頁數(shù)：6 Pages

TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/gb640n25s/marking.html">GB640N25S；Package：TO-220；250V N-Ch Power MOSFET

Feature ◇High Speed Power Switching ◇Enhanced Body diode dv/dtcapability ◇EnhancedAvalanche Ruggedness ◇100% UIS Tested, 100% Rg Tested ◇Lead Free Application ◇Synchronous Rectification in SMPS ◇Hard Switching and High Speed Circuit ◇Power Tools ◇UPS ◇Motor Control

文件：886.5 Kbytes 頁數(shù)：8 Pages

HUNTECK

恒泰柯半導體

絲印：GB640N25S；Package：TO-263；250V N-Ch Power MOSFET

Feature ◇High Speed Power Switching ◇Enhanced Body diode dv/dtcapability ◇EnhancedAvalanche Ruggedness ◇100% UIS Tested, 100% Rg Tested ◇Lead Free Application ◇Synchronous Rectification in SMPS ◇Hard Switching and High Speed Circuit ◇Power Tools ◇UPS ◇Motor Control

文件：886.5 Kbytes 頁數(shù)：8 Pages

HUNTECK

恒泰柯半導體

絲?。?a target="_blank" title="Marking" href="/gb640n25s/marking.html">GB640N25S；Package：TO-247；250V N-Ch Power MOSFET

Feature ◇High Speed Power Switching ◇Enhanced Body diode dv/dtcapability ◇EnhancedAvalanche Ruggedness ◇100% UIS Tested, 100% Rg Tested ◇Lead Free Application ◇Synchronous Rectification in SMPS ◇Hard Switching and High Speed Circuit ◇Power Tools ◇UPS ◇Motor Control

文件：886.5 Kbytes 頁數(shù)：8 Pages

HUNTECK

恒泰柯半導體

650V/6A Trench Field Stop IGBT

Features： ?High ruggedness performance ?Very tight parameter distribution ?Positive VCE (sat) temperature coefficient ?High efficiency for motor control ?Excellent current sharing in parallel operation ?RoHS compliant Applications： ?Home appliances ?Motor drives ?Fan, Pumps, Vacuum clean

文件：1.95385 Mbytes 頁數(shù)：6 Pages

LUGUANG

魯光電子

60W Single Output

文件：2.7474 Mbytes 頁數(shù)：7 Pages

SLPOWER

Programmable Power Supplies

文件：88.4 Kbytes 頁數(shù)：2 Pages

TDK

東電化