絲?。?strong>GB7；Package：SOT-23-3；300mA RF ULDO REGULATOR

Features ? Up to 300mA Output Current ? Excellent ESR Stability ? Low Standby Current ? Low Dropout Voltage: VDROP = 250mV at 300mA ? High Output Accuracy: ±1 ? Good Ripple Rejection Ability: 75dB at 100Hz and IOUT = 100μA ? Tight Load and Line Regulation ? Low Temperature Coefficient ? O

文件：715.83 Kbytes 頁數(shù)：30 Pages

DIODES

美臺半導(dǎo)體

絲?。?strong>GB7；Package：VSSOP；LM4924 Boomer? Audio Power Amplifier Series 2 Cell Battery, 40mW Per Channel Output Capacitor-Less (OCL) Stereo Headphone Audio Amplifier

1FEATURES 23? 2-Cell 1.5V to 3.6V Battery Operation ? OCL Mode for Stereo Headphone Operation ? Unity-Gain Stable ? “Click and Pop” Suppression Circuitry for Shutdown On and Off Transients ? Active Low Micropower Shutdown ? Thermal Shutdown Protection Circuitry APPLICATIONS ? Portable T

文件：1.21715 Mbytes 頁數(shù)：22 Pages

TI

德州儀器

絲印：GB7；Package：VSSOP；LM4924 Boomer? Audio Power Amplifier Series 2 Cell Battery, 40mW Per Channel Output Capacitor-Less (OCL) Stereo Headphone Audio Amplifier

1FEATURES 23? 2-Cell 1.5V to 3.6V Battery Operation ? OCL Mode for Stereo Headphone Operation ? Unity-Gain Stable ? “Click and Pop” Suppression Circuitry for Shutdown On and Off Transients ? Active Low Micropower Shutdown ? Thermal Shutdown Protection Circuitry APPLICATIONS ? Portable T

文件：1.21715 Mbytes 頁數(shù)：22 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/gb7h60df/marking.html">GB7H60DF；Package：D2PAK；Trench gate field-stop IGBT, H series 600 V, 7 A high speed

Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(s

文件：985.08 Kbytes 頁數(shù)：25 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/gb7nc60hd/marking.html">GB7NC60HD；Package：I2PAK_TO-262；N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode

Description These devices are very fast IGBT developed using advanced PowerMESH? technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o

文件：1.36326 Mbytes 頁數(shù)：22 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/gb7nc60hd/marking.html">GB7NC60HD；Package：D2PAK_TO-263；N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode

Description These devices are very fast IGBT developed using advanced PowerMESH? technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o

文件：1.36326 Mbytes 頁數(shù)：22 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/gb7nc60hd/marking.html">GB7NC60HD；Package：D2PAK；N-CHANNEL 14A - 600V - TO-220/TO-220FP/DPAK Very Fast PowerMESH IGBT

General Features ■ LOWER ON-VOLTAGE DROP (Vcesat) ■ OFF LOSSES INCLUDE TAIL CURRENT ■ LOSSES INCLUDE DIODE RECOVERY ENERGY ■ LOWER CRES/CIES RATIO ■ HIGH FREQUENCY OPERATION UP TO 70 KHz ■ VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE ■ NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER

文件：430.39 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A

FEATURES ? NPT Generation V IGBT technology ? Square RBSOA ? HEXFRED? low Qrr, low switching energy ? Positive VCE(on) temperature coefficient ? Fully isolated package ? Speed 8 kHz to 60 kHz ? Very low internal inductance (? 5 nH typical) ? Industry standard outline

文件：179.93 Kbytes 頁數(shù)：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH TM IGBT

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power MESH? IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with

文件：330.47 Kbytes 頁數(shù)：12 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode

Description These devices are very fast IGBT developed using advanced PowerMESH? technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o

文件：1.36326 Mbytes 頁數(shù)：22 Pages

STMICROELECTRONICS

意法半導(dǎo)體