絲?。?strong>GB2；Package：WQFN；LM4923 1.1 Watt Fully Differential Audio Power Amplifier With Shutdown Select

1FEATURES 2? Fully Differential Amplification ? Available in Space-saving WQFN Package ? Ultra Low Current Shutdown Mode ? Can Drive Capacitive Loads up to 100pF ? Improved Pop & Click Circuitry Eliminates Noises During Turn-on and Turn-off Transitions ? 2.4 - 5.5V Operation ? No Output C

文件：572.28 Kbytes 頁數(shù)：24 Pages

TI

德州儀器

絲?。?strong>GB2；Package：WQFN；LM4923 1.1 Watt Fully Differential Audio Power Amplifier With Shutdown Select

1FEATURES 2? Fully Differential Amplification ? Available in Space-saving WQFN Package ? Ultra Low Current Shutdown Mode ? Can Drive Capacitive Loads up to 100pF ? Improved Pop & Click Circuitry Eliminates Noises During Turn-on and Turn-off Transitions ? 2.4 - 5.5V Operation ? No Output C

文件：572.28 Kbytes 頁數(shù)：24 Pages

TI

德州儀器

絲?。?strong>GB2；Package：WQFN；LM4923 1.1 Watt Fully Differential Audio Power Amplifier With Shutdown Select

1FEATURES 2? Fully Differential Amplification ? Available in Space-saving WQFN Package ? Ultra Low Current Shutdown Mode ? Can Drive Capacitive Loads up to 100pF ? Improved Pop & Click Circuitry Eliminates Noises During Turn-on and Turn-off Transitions ? 2.4 - 5.5V Operation ? No Output C

文件：572.28 Kbytes 頁數(shù)：24 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/gb20nc60v/marking.html">GB20NC60V；Package：D2PAK；30 A - 600 V - very fast IGBT

Description This IGBT utilizes the advanced PowerMESH? process resulting in an excellent trade-off between switching performance and low on-state behavior. Features ? High frequency operation up to 50 kHz ? Lower CRES / CIES ratio (no cross-conduction susceptibility) ? High current capa

文件：469.12 Kbytes 頁數(shù)：20 Pages

STMICROELECTRONICS

意法半導體

絲?。?a target="_blank" title="Marking" href="/gb20n45lz/marking.html">GB20N45LZ；Package：D2PAK；Automotive-grade 450 V internally clamped IGBT ESCIS 300 mJ

文件：536.15 Kbytes 頁數(shù)：20 Pages

STMICROELECTRONICS

意法半導體

絲?。?a target="_blank" title="Marking" href="/gb20n45lz/marking.html">GB20N45LZ；Package：DPAK；Automotive-grade 450 V internally clamped IGBT ESCIS 300 mJ

文件：536.15 Kbytes 頁數(shù)：20 Pages

STMICROELECTRONICS

意法半導體

SCRs Nanosecond Switching, Planar

DESCRIPTION The Microsemi Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with high current switching capability in SCRs. FEATURES ● Rise Time : 10ns ● Delay Time : 10ns ● Recovery Time : 0.5μS ● Pulse Current : to 100A ● Turn-on with 20ns, 10mA Gate Pulse

文件：140.15 Kbytes 頁數(shù)：3 Pages

MICROSEMI

美高森美

SCRs Nanosecond Switching, Planar

DESCRIPTION The Microsemi Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with high current switching capability in SCRs. FEATURES ● Rise Time : 10ns ● Delay Time : 10ns ● Recovery Time : 0.5μS ● Pulse Current : to 100A ● Turn-on with 20ns, 10mA Gate Pulse

文件：140.15 Kbytes 頁數(shù)：3 Pages

MICROSEMI

美高森美

INT-A-PAK Half-Bridge (Ultrafast Speed IGBT), 209 A

FEATURES ? Generation 5 Non Punch Through (NPT) technology ? Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz ? Low VCE(on) ? 10 μs short circuit capability ? Square RBSOA ? Positive VCE(on) temperature coefficient ? HEXFRED? antiparallel diode with ultrasoft reverse recovery c

文件：202.59 Kbytes 頁數(shù)：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

SCRs Nanosecond Switching, Planar

DESCRIPTION The Microsemi Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with high current switching capability in SCRs. FEATURES ● Rise Time : 10ns ● Delay Time : 10ns ● Recovery Time : 0.5μS ● Pulse Current : to 100A ● Turn-on with 20ns, 10mA Gate Pulse

文件：140.15 Kbytes 頁數(shù)：3 Pages

MICROSEMI

美高森美