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          首頁 >GA2>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          GA200SA60UP

          Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A

          FEATURES ? Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode ? Very low conduction and switching losses ? Fully isolate package (2500 VAC/RMS) ? Very low internal inductance (≤ 5 nH typical) ? Industry standard o

          文件:153.03 Kbytes 頁數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          GA200TD120U

          HALF-BRIDGE IGBT DOUBLE INT-A-PAK

          Features ? UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode ? Very low conduction and switching losses ? HEXFRED? antiparallel diodes with ultra- soft recovery ? Industry standard package ? UL approved ? Generation 4 IGBT technology B

          文件:299.66 Kbytes 頁數(shù):10 Pages

          IRF

          GA200TS60U

          HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT

          HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT Features ? UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode ? Very low conduction and switching losses ? HEXFRED?antiparallel diodes with ultra-soft recovery ? Industry stan

          文件:303.56 Kbytes 頁數(shù):10 Pages

          IRF

          GA200TS60UPBF

          Half-Bridge IGBT INT-A-PAK (Ultrafast Speed IGBT), 200 A

          Half-Bridge IGBT INT-A-PAK (Ultrafast Speed IGBT), 200 A FEATURES ? Generation 4 IGBT technology ? Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode ? Very low conduction and switching losses ? HEXFRED? antiparallel diodes with ul

          文件:239.87 Kbytes 頁數(shù):9 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          GA200TS60UX

          Ultra-FastTM Speed IGBT

          HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT Features ? Generation 4 IGBT technology ? UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode ? Very low conduction and switching losses ? HEXFREDTM antiparallel diodes with ul

          文件:205.52 Kbytes 頁數(shù):9 Pages

          IRF

          GA201

          SCRs Nanosecond Switching, Planar

          DESCRIPTION The Microsemi Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with high current switching capability in SCRs. FEATURES ● Rise Time : 10ns ● Delay Time : 10ns ● Recovery Time : 0.5μS ● Pulse Current : to 100A ● Turn-on with 20ns, 10mA Gate Pulse

          文件:140.15 Kbytes 頁數(shù):3 Pages

          MICROSEMI

          美高森美

          GA201A

          SCRs Nanosecond Switching, Planar

          DESCRIPTION The Microsemi Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with high current switching capability in SCRs. FEATURES ● Rise Time : 10ns ● Delay Time : 10ns ● Recovery Time : 0.5μS ● Pulse Current : to 100A ● Turn-on with 20ns, 10mA Gate Pulse

          文件:140.15 Kbytes 頁數(shù):3 Pages

          MICROSEMI

          美高森美

          GA200

          SILICON CONTROLLED RECTIFIER NANOSECOND SWITCHING PLANAR

          文件:173.42 Kbytes 頁數(shù):4 Pages

          DIGITRON

          GA200A

          SILICON CONTROLLED RECTIFIER NANOSECOND SWITCHING PLANAR

          文件:173.42 Kbytes 頁數(shù):4 Pages

          DIGITRON

          GA201

          SILICON CONTROLLED RECTIFIER NANOSECOND SWITCHING PLANAR

          文件:173.42 Kbytes 頁數(shù):4 Pages

          DIGITRON

          產(chǎn)品屬性

          • 產(chǎn)品編號:

            AZ431BN-ATRG1

          • 制造商:

            Diodes Incorporated

          • 類別:

            集成電路(IC) > 電壓基準(zhǔn)

          • 包裝:

            管件

          • 參考類型:

            分流器

          • 輸出類型:

            可調(diào)式

          • 電壓 - 輸出(最小值/固定):

            2.5V

          • 容差:

            ±0.8%

          • 溫度系數(shù):

            標(biāo)準(zhǔn)為 20ppm/°C

          • 工作溫度:

            -40°C ~ 125°C(TA)

          • 安裝類型:

            表面貼裝型

          • 封裝/外殼:

            TO-236-3,SC-59,SOT-23-3

          • 供應(yīng)商器件封裝:

            SOT-23-3

          • 描述:

            IC VREF SHUNT ADJ 0.8% SOT23

          供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
          DIODES美臺
          2023
          SOT23-3
          415
          全新原裝 正品現(xiàn)貨
          詢價(jià)
          BCD
          25+
          SOT23
          33224
          BCD全新特價(jià)AZ431BN-ATRG1即刻詢購立享優(yōu)惠#長期有貨
          詢價(jià)
          BCD
          2019+PB
          SOT-23
          3220
          原裝正品 可含稅交易
          詢價(jià)
          DIODES(美臺)
          SOT23-3
          4816
          全新原裝正品現(xiàn)貨可開票
          詢價(jià)
          DIODES(美臺)
          25
          SOT-23
          745
          QQ詢價(jià) 絕對原裝正品
          詢價(jià)
          DiodesIncorporated
          19+
          58000
          原裝正品價(jià)格優(yōu)勢
          詢價(jià)
          DiodesIncorporated
          24+
          SOT-23
          66800
          原廠授權(quán)一級代理,專注汽車、醫(yī)療、工業(yè)、新能源!
          詢價(jià)
          BCD
          25+
          SOT23-3
          15000
          全新原裝現(xiàn)貨,價(jià)格優(yōu)勢
          詢價(jià)
          Diodes Incorporated
          24+
          SOT-23
          65200
          一級代理/放心采購
          詢價(jià)
          DIODES/美臺
          23+
          SOT23-3
          12730
          原裝正品代理渠道價(jià)格優(yōu)勢
          詢價(jià)
          更多GA2供應(yīng)商 更新時(shí)間2026-1-20 16:00:00
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