Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A

FEATURES ? Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode ? Very low conduction and switching losses ? Fully isolate package (2500 VAC/RMS) ? Very low internal inductance (≤ 5 nH typical) ? Industry standard o

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VISHAYVishay Siliconix

威世威世科技公司

IGBT

DESCRIPTION · Low VCE(sat) for minimum on-stateconduction losses · Very high current, fast switchingIGBT · MOS Gate turn-on drive simplicity APPLICATIONS · AC motor speed control · DC servo and robot drives · Uninterruptible power supplies (UPS)

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ISC

無錫固電

Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A

Vishay

威世

SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop (150 ?C TJ Operation)

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SENSITRON

SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop (150 ?C TJ Operation)

文件：54.24 Kbytes 頁數(shù)：3 Pages

SENSITRON

SILICON SCHOTTKY RECTIFIER DIE

Ultra low Reverse Leakage Current Soft Reverse Recovery at Low and High Temperature Very Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Electrically / Mech

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SMCDIODE

桑德斯微電子