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          G8370-02
          InGaAs PIN photodiode
          
InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


Features

Low noise, low dark current

Large active area

Various active area sizes available


Applications

          文件：220.74 Kbytes 頁(yè)數(shù)：4 Pages
          HAMAMATSUHamamatsu Photonics  Co.,Ltd.
          濱松光子濱松光子學(xué)株式會(huì)社
          

          G8370-03
          InGaAs PIN photodiode
          
InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


Features

Low noise, low dark current

Large active area

Various active area sizes available


Applications

          文件：220.74 Kbytes 頁(yè)數(shù)：4 Pages
          HAMAMATSUHamamatsu Photonics  Co.,Ltd.
          濱松光子濱松光子學(xué)株式會(huì)社
          

          G8370-05
          InGaAs PIN photodiode
          
InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


Features

Low noise, low dark current

Large active area

Various active area sizes available


Applications

          文件：220.74 Kbytes 頁(yè)數(shù)：4 Pages
          HAMAMATSUHamamatsu Photonics  Co.,Ltd.
          濱松光子濱松光子學(xué)株式會(huì)社
          

          G8370-10
          InGaAs PIN photodiode
          
InGaAs PIN photodiode
Ceramic package with large active area (φ10 mm)
Features
● Large active area: φ10 mm
● High sensitivity: 0.95 A/W Typ. (λ=1.55 μm)
● Low dark current
● Low PDL: 5 mdB Typ., 10 mdB Max.
● Photo response non-uniformity: ±2  Typ.
Applications
● LD power monitor
● LD ag
          文件：122.03 Kbytes 頁(yè)數(shù)：2 Pages
          HAMAMATSUHamamatsu Photonics  Co.,Ltd.
          濱松光子濱松光子學(xué)株式會(huì)社
          

          G8370-81
          InGaAs PIN photodiode
          
Low PDL (Polarization Dependence Loss)


InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 μm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


Features


          文件：109.65 Kbytes 頁(yè)數(shù)：3 Pages
          HAMAMATSUHamamatsu Photonics  Co.,Ltd.
          濱松光子濱松光子學(xué)株式會(huì)社
          

          G8370-82
          InGaAs PIN photodiode
          
Low PDL (Polarization Dependence Loss)


InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 μm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


Features


          文件：109.65 Kbytes 頁(yè)數(shù)：3 Pages
          HAMAMATSUHamamatsu Photonics  Co.,Ltd.
          濱松光子濱松光子學(xué)株式會(huì)社
          

          G8370-83
          InGaAs PIN photodiode
          
Low PDL (Polarization Dependence Loss)


InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 μm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


Features


          文件：109.65 Kbytes 頁(yè)數(shù)：3 Pages
          HAMAMATSUHamamatsu Photonics  Co.,Ltd.
          濱松光子濱松光子學(xué)株式會(huì)社
          

          G8370-85
          InGaAs PIN photodiode
          
Low PDL (Polarization Dependence Loss)


InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 μm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


Features


          文件：109.65 Kbytes 頁(yè)數(shù)：3 Pages
          HAMAMATSUHamamatsu Photonics  Co.,Ltd.
          濱松光子濱松光子學(xué)株式會(huì)社
          

          G8371-01
          InGaAs PIN photodiode
          
Long wavelength type


Features

? Long cut-off wavelength: 1.9 μm

? 3-pin TO-18 package: low price

? Thermoelectrically cooled TO-18 package: low dark current

? Active area: φ0.3 to φ3 mm


Applications

? Optical power meter

? Gas analyzer

? NIR (near infrared) photometr
          文件：169.14 Kbytes 頁(yè)數(shù)：4 Pages
          HAMAMATSUHamamatsu Photonics  Co.,Ltd.
          濱松光子濱松光子學(xué)株式會(huì)社
          

          G8371-03
          InGaAs PIN photodiode
          
Long wavelength type


Features

? Long cut-off wavelength: 1.9 μm

? 3-pin TO-18 package: low price

? Thermoelectrically cooled TO-18 package: low dark current

? Active area: φ0.3 to φ3 mm


Applications

? Optical power meter

? Gas analyzer

? NIR (near infrared) photometr
          文件：169.14 Kbytes 頁(yè)數(shù)：4 Pages
          HAMAMATSUHamamatsu Photonics  Co.,Ltd.
          濱松光子濱松光子學(xué)株式會(huì)社
          

          
            
          
		
        
          
            
          
                
          詳細(xì)參數(shù)
          
            
          
            
            
            	
          • 型號(hào)：
            G83
          • 制造商：
            HAMAMATSU 
          • 制造商全稱：
            Hamamatsu Corporation 
          • 功能描述：
            InGaAs PIN photodiode with preamp 
          
            
          
        
          
            
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