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                >G8370>規(guī)格書(shū)列表
                
    
            
    
                
    
                    
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    G8370
    InGaAs PIN photodiode
    
InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


Features

Low noise, low dark current

Large active area

Various active area sizes available


Applications

    文件：220.74 Kbytes 頁(yè)數(shù)：4 Pages
    HAMAMATSUHamamatsu Photonics  Co.,Ltd.
    濱松光子濱松光子學(xué)株式會(huì)社
    

    G8370
    Large active areas from φ1 to φ5 mm
    InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.  Low noise, low dark current\nLarge active area\nVarious active area sizes availableApplications\nLaser monitor\nOptical power meter\nLaser diode life test;
    Hamamatsu
    濱松光子
    

    G8370-01
    InGaAs PIN photodiode
    
InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


Features

Low noise, low dark current

Large active area

Various active area sizes available


Applications

    文件：220.74 Kbytes 頁(yè)數(shù)：4 Pages
    HAMAMATSUHamamatsu Photonics  Co.,Ltd.
    濱松光子濱松光子學(xué)株式會(huì)社
    

    G8370-02
    InGaAs PIN photodiode
    
InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


Features

Low noise, low dark current

Large active area

Various active area sizes available


Applications

    文件：220.74 Kbytes 頁(yè)數(shù)：4 Pages
    HAMAMATSUHamamatsu Photonics  Co.,Ltd.
    濱松光子濱松光子學(xué)株式會(huì)社
    

    G8370-03
    InGaAs PIN photodiode
    
InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


Features

Low noise, low dark current

Large active area

Various active area sizes available


Applications

    文件：220.74 Kbytes 頁(yè)數(shù)：4 Pages
    HAMAMATSUHamamatsu Photonics  Co.,Ltd.
    濱松光子濱松光子學(xué)株式會(huì)社
    

    G8370-05
    InGaAs PIN photodiode
    
InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


Features

Low noise, low dark current

Large active area

Various active area sizes available


Applications

    文件：220.74 Kbytes 頁(yè)數(shù)：4 Pages
    HAMAMATSUHamamatsu Photonics  Co.,Ltd.
    濱松光子濱松光子學(xué)株式會(huì)社
    

    G8370-10
    InGaAs PIN photodiode
    
InGaAs PIN photodiode
Ceramic package with large active area (φ10 mm)
Features
● Large active area: φ10 mm
● High sensitivity: 0.95 A/W Typ. (λ=1.55 μm)
● Low dark current
● Low PDL: 5 mdB Typ., 10 mdB Max.
● Photo response non-uniformity: ±2  Typ.
Applications
● LD power monitor
● LD ag
    文件：122.03 Kbytes 頁(yè)數(shù)：2 Pages
    HAMAMATSUHamamatsu Photonics  Co.,Ltd.
    濱松光子濱松光子學(xué)株式會(huì)社
    

    G8370-81
    InGaAs PIN photodiode
    
Low PDL (Polarization Dependence Loss)


InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 μm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


Features


    文件：109.65 Kbytes 頁(yè)數(shù)：3 Pages
    HAMAMATSUHamamatsu Photonics  Co.,Ltd.
    濱松光子濱松光子學(xué)株式會(huì)社
    

    G8370-82
    InGaAs PIN photodiode
    
Low PDL (Polarization Dependence Loss)


InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 μm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


Features


    文件：109.65 Kbytes 頁(yè)數(shù)：3 Pages
    HAMAMATSUHamamatsu Photonics  Co.,Ltd.
    濱松光子濱松光子學(xué)株式會(huì)社
    

    G8370-83
    InGaAs PIN photodiode
    
Low PDL (Polarization Dependence Loss)


InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 μm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


Features


    文件：109.65 Kbytes 頁(yè)數(shù)：3 Pages
    HAMAMATSUHamamatsu Photonics  Co.,Ltd.
    濱松光子濱松光子學(xué)株式會(huì)社
    

    
            
    
		
        
    
            
    
                
    技術(shù)參數(shù)
    
            
    
            
      
            	
    • 像元個(gè)數(shù)：
      1
    • 封裝：
      Metal
    • 封裝類型：
      TO-5
    • 制冷方式：
      Non-cooled
    • 光譜響應(yīng)范圍：
      0.9 to 1.7 μm
    • 峰值靈敏度波長(zhǎng)(典型值)：
      1.55 μm
    • 靈敏度 (典型值)：
      1.1 A/W
    • 暗電流 (最大值)：
      25 nA
    • 截至頻率（典型值）：
      4 MHz
    • 結(jié)電容(典型值)：
      550 pF
    • 噪聲等效功率 (典型值)：
      4×10-14 W/Hz1/2
    • 測(cè)量條件：
      Typ. Ta=25 ℃
    
            
    
        
    
            
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            更新時(shí)間2026-1-22 16:03:00
        
    
        
    
          
    
            
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