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          首頁(yè) >G2K>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          G2K

          GLASS PASSIVATED JUNCTION RECTIFIER

          Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes FEATURES ? High temperature metallurgically bonded construction ? Glass passivated cavity-free junction ? Hermetically sealed package 2.0 Ampere operation at TA=75°C with no thermal runaway ? Typical IR less than 0.1μA ? Ca

          文件:52.46 Kbytes 頁(yè)數(shù):2 Pages

          GE

          G2KF

          絲印:G2K;SURFACE MOUNT SILICON RECTIFIERS

          文件:85.2 Kbytes 頁(yè)數(shù):3 Pages

          MIC

          昌福電子

          UG2126TB-E3

          絲?。?strong>G2K;GaAs INTEGRATED CIRCUIT

          FEATURES ? Supply voltage : VDD1, 2, 3 = 3.1 to 4.4 V (3.6 V TYP.) ? Low operation current : IDD1 = 16 mA TYP. @ VDD1 = 3.6 V, f = 925 MHz, Pout = +8 dBm : IDD2 = 28 mA TYP. @ VDD2, 3 = 3.6 V, f = 1 441 MHz, Pout = +8 dBm ? High power gain : GP1 = 16 dB TYP. @ VDD1 = 3.6 V, f = 925 MHz, Pin =

          文件:223.59 Kbytes 頁(yè)數(shù):11 Pages

          RENESAS

          瑞薩

          G2K2P10D3E

          絲印:G2K2P10;Package:DFN3X3-8L;P-Channel Enhancement Mode Power MOSFET

          Description The G2K2P10D3E uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

          文件:648.9 Kbytes 頁(yè)數(shù):6 Pages

          GOFORD

          谷峰半導(dǎo)體

          G2K2P10S2E

          絲?。?a target="_blank" title="Marking" href="/g2k2p10s2/marking.html">G2K2P10S2;Package:SOP-8Dual;Dual P-Channel Enhancement Mode Power MOSFET

          Description The G2K2P10S2E uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

          文件:834.14 Kbytes 頁(yè)數(shù):6 Pages

          GOFORD

          谷峰半導(dǎo)體

          G2K2P10SE

          絲印:G2K2P10;Package:SOP-8;P-Channel Enhancement Mode Power MOSFET

          Description The G2K2P10SE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

          文件:809.56 Kbytes 頁(yè)數(shù):6 Pages

          GOFORD

          谷峰半導(dǎo)體

          G2K3N10G

          絲?。?a target="_blank" title="Marking" href="/g2k3n10/marking.html">G2K3N10;Package:SOT-89;N-Channel Enhancement Mode Power MOSFET

          Description The G2K3N10G uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

          文件:961.46 Kbytes 頁(yè)數(shù):6 Pages

          GOFORD

          谷峰半導(dǎo)體

          G2K3N10H

          絲印:G2K3N10;Package:SOT-223;N-Channel Enhancement Mode Power MOSFET

          Description The G2K3N10H uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

          文件:982.02 Kbytes 頁(yè)數(shù):6 Pages

          GOFORD

          谷峰半導(dǎo)體

          G2K3N10HA

          絲?。?a target="_blank" title="Marking" href="/g2k3n10/marking.html">G2K3N10;Package:SOT-223;N-Channel Enhancement Mode Power MOSFET

          Description The G2K3N10HA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

          文件:1.22021 Mbytes 頁(yè)數(shù):6 Pages

          GOFORD

          谷峰半導(dǎo)體

          G2K3N10L6

          絲?。?a target="_blank" title="Marking" href="/g2k3n10/marking.html">G2K3N10;Package:SOT-23-6-Dual;Dual N-Channel Enhancement Mode Power MOSFET

          Description The G2K3N10L6 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

          文件:924.54 Kbytes 頁(yè)數(shù):6 Pages

          GOFORD

          谷峰半導(dǎo)體

          技術(shù)參數(shù)

          • Configuration:

            P channel

          • ESD:

            YES

          • VDS:

            -100V

          • Id at 25℃(max):

            -10A

          • PD(max):

            31W

          • Vgs(th)typ(V):

            -1.6V

          • RDS(on)(typ)(@10V):

            175mΩ

          • RDS(on)(typ)(@4.5V):

            188mΩ

          • Qg(nC):

            33

          • Ciss:

            1668

          • Crss:

            44

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          兩年內(nèi)
          NA
          1067
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          25+
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          49
          原裝正品,假一罰十!
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          TO-252-2
          986966
          國(guó)產(chǎn)
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          更多G2K供應(yīng)商 更新時(shí)間2026-1-19 16:30:00
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