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          首頁 >FTD21>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          FTD21

          DIODE TRIO WAI TYPE Low forward voltage drop

          Features * Low forward voltage drop * High current capability * High reliability ???????* High surge current capability Mechanical Data * Case: OFC Heat Sink * Encap: Epoxy Sealed Rated UL94V-0 * Weight: 6.5 gram

          文件:304.66 Kbytes 頁數(shù):1 Pages

          FCI

          富加宜

          FTD21

          MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

          Features * Low forward voltage drop * High current capability * High reliability ???????* High surge current capability Mechanical Data * Case: OFC Heat Sink * Encap: Epoxy Sealed Rated UL94V-0 * Weight: 6.5 gram

          文件:304.66 Kbytes 頁數(shù):1 Pages

          FCI-CONNECTOR

          FTD2114K

          Epitaxial planar type NPN silicon transistor

          Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE(sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) We declare that the material of product compliance with RoHS requirements.

          文件:126.58 Kbytes 頁數(shù):4 Pages

          FS

          FTD2114KVLT1G

          絲?。?a target="_blank" title="Marking" href="/bv/marking.html">BV;Package:SOT-23;Epitaxial planar type NPN silicon transistor

          Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE(sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) We declare that the material of product compliance with RoHS requirements.

          文件:126.58 Kbytes 頁數(shù):4 Pages

          FS

          FTD2114KVLT3G

          絲?。?a target="_blank" title="Marking" href="/bv/marking.html">BV;Package:SOT-23;Epitaxial planar type NPN silicon transistor

          Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE(sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) We declare that the material of product compliance with RoHS requirements.

          文件:126.58 Kbytes 頁數(shù):4 Pages

          FS

          FTD2114KWLT1G

          絲?。?a target="_blank" title="Marking" href="/bw/marking.html">BW;Package:SOT-23;Epitaxial planar type NPN silicon transistor

          Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE(sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) We declare that the material of product compliance with RoHS requirements.

          文件:126.58 Kbytes 頁數(shù):4 Pages

          FS

          FTD2114KWLT3G

          絲?。?a target="_blank" title="Marking" href="/bw/marking.html">BW;Package:SOT-23;Epitaxial planar type NPN silicon transistor

          Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE(sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) We declare that the material of product compliance with RoHS requirements.

          文件:126.58 Kbytes 頁數(shù):4 Pages

          FS

          FTD2118

          絲?。?a target="_blank" title="Marking" href="/d-pak/marking.html">D-PAK;Package:TO-252;TRANSISTOR (NPN)

          TRANSISTOR (NPN) FEATURES ● Low VCE(sat). ● Excellent DC Current Gain Characteristics.

          文件:330.64 Kbytes 頁數(shù):2 Pages

          FS

          FTD2118I

          絲?。?a target="_blank" title="Marking" href="/i-pak/marking.html">I-PAK;Package:TO-251;TRANSISTOR (NPN)

          TRANSISTOR (NPN) FEATURES ● Low VCE(sat). ● Excellent DC Current Gain Characteristics.

          文件:354.01 Kbytes 頁數(shù):2 Pages

          FS

          FTD21

          DIODE TRIO WAI TYPE Low forward voltage drop

          FCI

          富加宜

          技術(shù)參數(shù)

          • PC:

            200

          • IC:

            500

          • VCBO:

            25

          • VCEO:

            20

          • VCE(SAT):

            0.4

          • HFE(min):

            820

          • HFE(max):

            2700

          • FT:

            350

          • Package:

            SOT-23

          供應(yīng)商型號品牌批號封裝庫存備注價格
          IPS
          1728+
          TO-252
          8500
          只做原裝進(jìn)口,假一罰十
          詢價
          IPS
          23+
          TO-252
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價
          I
          TO-252
          22+
          6000
          十年配單,只做原裝
          詢價
          IPS
          1932+
          TO-252
          1610
          一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
          詢價
          IPS
          23+24
          TO-252
          56983
          原裝正品,原盤原標(biāo),提供BOM一站式配單
          詢價
          IPS
          25+
          TO-252
          188600
          全新原廠原裝正品現(xiàn)貨 歡迎咨詢
          詢價
          IPS
          25+
          SOT-252
          2500
          原裝正品,假一罰十!
          詢價
          IPS
          23+
          TO-252
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價
          IPS
          24+
          TO-252
          60000
          詢價
          VBsemi(臺灣微碧)
          2447
          TO-252
          105000
          2500個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,
          詢價
          更多FTD21供應(yīng)商 更新時間2026-1-19 15:10:00
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