| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
FTD21 | DIODE TRIO WAI TYPE Low forward voltage drop Features * Low forward voltage drop * High current capability * High reliability ???????* High surge current capability Mechanical Data * Case: OFC Heat Sink * Encap: Epoxy Sealed Rated UL94V-0 * Weight: 6.5 gram 文件:304.66 Kbytes 頁數(shù):1 Pages | FCI 富加宜 | FCI | |
FTD21 | MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Features * Low forward voltage drop * High current capability * High reliability ???????* High surge current capability Mechanical Data * Case: OFC Heat Sink * Encap: Epoxy Sealed Rated UL94V-0 * Weight: 6.5 gram 文件:304.66 Kbytes 頁數(shù):1 Pages | FCI-CONNECTOR | FCI-CONNECTOR | |
Epitaxial planar type NPN silicon transistor Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE(sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) We declare that the material of product compliance with RoHS requirements. 文件:126.58 Kbytes 頁數(shù):4 Pages | FS | FS | ||
絲?。?a target="_blank" title="Marking" href="/bv/marking.html">BV;Package:SOT-23;Epitaxial planar type NPN silicon transistor Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE(sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) We declare that the material of product compliance with RoHS requirements. 文件:126.58 Kbytes 頁數(shù):4 Pages | FS | FS | ||
絲?。?a target="_blank" title="Marking" href="/bv/marking.html">BV;Package:SOT-23;Epitaxial planar type NPN silicon transistor Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE(sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) We declare that the material of product compliance with RoHS requirements. 文件:126.58 Kbytes 頁數(shù):4 Pages | FS | FS | ||
絲?。?a target="_blank" title="Marking" href="/bw/marking.html">BW;Package:SOT-23;Epitaxial planar type NPN silicon transistor Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE(sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) We declare that the material of product compliance with RoHS requirements. 文件:126.58 Kbytes 頁數(shù):4 Pages | FS | FS | ||
絲?。?a target="_blank" title="Marking" href="/bw/marking.html">BW;Package:SOT-23;Epitaxial planar type NPN silicon transistor Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE(sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) We declare that the material of product compliance with RoHS requirements. 文件:126.58 Kbytes 頁數(shù):4 Pages | FS | FS | ||
絲?。?a target="_blank" title="Marking" href="/d-pak/marking.html">D-PAK;Package:TO-252;TRANSISTOR (NPN) TRANSISTOR (NPN) FEATURES ● Low VCE(sat). ● Excellent DC Current Gain Characteristics. 文件:330.64 Kbytes 頁數(shù):2 Pages | FS | FS | ||
絲?。?a target="_blank" title="Marking" href="/i-pak/marking.html">I-PAK;Package:TO-251;TRANSISTOR (NPN) TRANSISTOR (NPN) FEATURES ● Low VCE(sat). ● Excellent DC Current Gain Characteristics. 文件:354.01 Kbytes 頁數(shù):2 Pages | FS | FS | ||
FTD21 | DIODE TRIO WAI TYPE Low forward voltage drop | FCI 富加宜 | FCI |
技術(shù)參數(shù)
- PC:
200
- IC:
500
- VCBO:
25
- VCEO:
20
- VCE(SAT):
0.4
- HFE(min):
820
- HFE(max):
2700
- FT:
350
- Package:
SOT-23
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IPS |
1728+ |
TO-252 |
8500 |
只做原裝進(jìn)口,假一罰十 |
詢價 | ||
IPS |
23+ |
TO-252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
I |
TO-252 |
22+ |
6000 |
十年配單,只做原裝 |
詢價 | ||
IPS |
1932+ |
TO-252 |
1610 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
IPS |
23+24 |
TO-252 |
56983 |
原裝正品,原盤原標(biāo),提供BOM一站式配單 |
詢價 | ||
IPS |
25+ |
TO-252 |
188600 |
全新原廠原裝正品現(xiàn)貨 歡迎咨詢 |
詢價 | ||
IPS |
25+ |
SOT-252 |
2500 |
原裝正品,假一罰十! |
詢價 | ||
IPS |
23+ |
TO-252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
IPS |
24+ |
TO-252 |
60000 |
詢價 | |||
VBsemi(臺灣微碧) |
2447 |
TO-252 |
105000 |
2500個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨, |
詢價 |
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