| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K 文件:56.72 Kbytes 頁數(shù):8 Pages | INTERSIL | INTERSIL | ||
9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K 文件:56.72 Kbytes 頁數(shù):8 Pages | INTERSIL | INTERSIL | ||
9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K 文件:56.72 Kbytes 頁數(shù):8 Pages | INTERSIL | INTERSIL | ||
9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K 文件:56.72 Kbytes 頁數(shù):8 Pages | INTERSIL | INTERSIL | ||
9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K 文件:56.72 Kbytes 頁數(shù):8 Pages | INTERSIL | INTERSIL | ||
9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K 文件:56.72 Kbytes 頁數(shù):8 Pages | INTERSIL | INTERSIL | ||
7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul 文件:46.88 Kbytes 頁數(shù):8 Pages | INTERSIL | INTERSIL | ||
7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul 文件:46.88 Kbytes 頁數(shù):8 Pages | INTERSIL | INTERSIL | ||
7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul 文件:46.88 Kbytes 頁數(shù):8 Pages | INTERSIL | INTERSIL | ||
7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul 文件:46.88 Kbytes 頁數(shù):8 Pages | INTERSIL | INTERSIL |
技術(shù)參數(shù)
- IF(AV) (A):
2
- VRRM (V):
30
- TRR (ns):
>10
- Vf (V):
0.50
- IFSM (A):
50
- Outline:
DO214AA/SMB
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
SANYO/三洋 |
26+ |
Sot-153 |
86720 |
全新原裝正品價格最實惠 假一賠百 |
詢價 | ||
SANYO |
00+ |
SOP8 |
2600 |
全新原裝進口自己庫存優(yōu)勢 |
詢價 | ||
F |
06+ |
原廠原裝 |
4293 |
只做全新原裝真實現(xiàn)貨供應 |
詢價 | ||
FSC |
24+ |
SO-8 |
5000 |
詢價 | |||
SANYO |
17+ |
SOP8 |
9988 |
只做原裝進口,自己庫存 |
詢價 | ||
SANYO |
23+ |
SO-8 |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
FAGOR |
23+ |
NA |
6716 |
專做原裝正品,假一罰百! |
詢價 | ||
SANYO |
25+23+ |
SOP8 |
22315 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
三年內(nèi) |
1983 |
只做原裝正品 |
詢價 | ||||
SANYO |
24+ |
SOP8 |
20000 |
全新原廠原裝,進口正品現(xiàn)貨,正規(guī)渠道可含稅??! |
詢價 |
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- PI7C8150B
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