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          首頁 >FSS23>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          FSS234D

          6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

          Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

          文件:45.39 Kbytes 頁數(shù):8 Pages

          INTERSIL

          FSS234D1

          6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

          Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

          文件:45.39 Kbytes 頁數(shù):8 Pages

          INTERSIL

          FSS234D3

          6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

          Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

          文件:45.39 Kbytes 頁數(shù):8 Pages

          INTERSIL

          FSS234R

          6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

          Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

          文件:45.39 Kbytes 頁數(shù):8 Pages

          INTERSIL

          FSS234R1

          6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

          Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

          文件:45.39 Kbytes 頁數(shù):8 Pages

          INTERSIL

          FSS234R3

          6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

          Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

          文件:45.39 Kbytes 頁數(shù):8 Pages

          INTERSIL

          FSS234R4

          6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

          Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

          文件:45.39 Kbytes 頁數(shù):8 Pages

          INTERSIL

          FSS238

          Load Switching Applications

          Features ? Low ON resistance. ? 4V drive.

          文件:72.33 Kbytes 頁數(shù):4 Pages

          SANYO

          三洋

          FSS239

          Load Switching Applications

          Features ? Low ON resistance. ? 2.5V drive.

          文件:28.35 Kbytes 頁數(shù):4 Pages

          SANYO

          三洋

          FSS23A0D

          9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

          The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K

          文件:56.72 Kbytes 頁數(shù):8 Pages

          INTERSIL

          技術(shù)參數(shù)

          • IF(AV) (A):

            2

          • VRRM (V):

            30

          • TRR (ns):

            >10

          • Vf (V):

            0.50

          • IFSM (A):

            50

          • Outline:

            DO214AA/SMB

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
          SANYO/三洋
          26+
          Sot-153
          86720
          全新原裝正品價(jià)格最實(shí)惠 假一賠百
          詢價(jià)
          SANYO
          00+
          SOP8
          2600
          全新原裝進(jìn)口自己庫存優(yōu)勢(shì)
          詢價(jià)
          F
          06+
          原廠原裝
          4293
          只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
          詢價(jià)
          FSC
          24+
          SO-8
          5000
          詢價(jià)
          SANYO
          17+
          SOP8
          9988
          只做原裝進(jìn)口,自己庫存
          詢價(jià)
          SANYO
          23+
          SO-8
          8560
          受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
          詢價(jià)
          FAGOR
          23+
          NA
          6716
          專做原裝正品,假一罰百!
          詢價(jià)
          SANYO
          25+23+
          SOP8
          22315
          絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
          詢價(jià)
          三年內(nèi)
          1983
          只做原裝正品
          詢價(jià)
          SANYO
          24+
          SOP8
          20000
          全新原廠原裝,進(jìn)口正品現(xiàn)貨,正規(guī)渠道可含稅??!
          詢價(jià)
          更多FSS23供應(yīng)商 更新時(shí)間2026-1-19 15:52:00
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