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首頁 >FSPYC260F>規(guī)格書列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
FSPYC260F	文件：83.67 Kbytes Page：8 Pages	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil StarPower Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. StarPower MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star 文件：83.67 Kbytes 頁數(shù)：8 Pages	INTERSIL	INTERSIL
FSPYC260F3	文件：83.67 Kbytes Page：8 Pages	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil StarPower Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. StarPower MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star 文件：83.67 Kbytes 頁數(shù)：8 Pages	INTERSIL	INTERSIL
FSPYC260F4	文件：83.67 Kbytes Page：8 Pages	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil StarPower Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. StarPower MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star 文件：83.67 Kbytes 頁數(shù)：8 Pages	INTERSIL	INTERSIL
FSPYC260R	文件：83.67 Kbytes Page：8 Pages	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil StarPower Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. StarPower MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star 文件：83.67 Kbytes 頁數(shù)：8 Pages	INTERSIL	INTERSIL
FSYC260D	文件：48.83 Kbytes Page：8 Pages	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi 文件：48.83 Kbytes 頁數(shù)：8 Pages	INTERSIL	INTERSIL
FSYC260R	文件：48.83 Kbytes Page：8 Pages	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi 文件：48.83 Kbytes 頁數(shù)：8 Pages	INTERSIL	INTERSIL

詳細(xì)參數(shù)

型號(hào)：
FSPYC260F
制造商：
INTERSIL
制造商全稱：
Intersil Corporation
功能描述：
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
芯有半導(dǎo)體（深圳）有限公司	FSPYC260R4	ISL	05+	原廠原裝	4300	只做全新原裝真實(shí)現(xiàn)貨供應(yīng)	詢價(jià)
深圳市賽爾通科技有限公司	FSPYC260R4	ISL	23+		65480		詢價(jià)
深圳市凌旭科技有限公司	FSQ0165R	FSC	2016+	DIP8	3500	只做原裝,假一罰十,公司可開17%增值稅發(fā)票!	詢價(jià)
深圳市鵬和科技有限公司	FSQ0165R	FSC	24+	DIP8	5000	只做原裝公司現(xiàn)貨	詢價(jià)
深圳市毅創(chuàng)弘電子科技有限公司	FSQ0165R	FAIRCHILD	24+	DIP-8	66800	原廠授權(quán)一級(jí)代理,專注汽車、醫(yī)療、工業(yè)、新能源！	詢價(jià)
深圳市億智騰科技有限公司	FSQ0165R		24+	DIP-8	6430	原裝現(xiàn)貨/歡迎來電咨詢	詢價(jià)
瀚佳科技(深圳)有限公司	FSQ0165R	FSC	24+	DIP8	65200	一級(jí)代理/放心采購(gòu)	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	FSQ0165R	FAIRCHILD/仙童	23+	DIP8	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市安富世紀(jì)電子有限公司	FSQ0165R	DIP8	23+	FAIRCHILD	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市勝彬電子有限公司	FSQ0165R	FAIRCILD	22+	DIP-8	8000	原裝正品支持實(shí)單	詢價(jià)

更多FSPYC260F供應(yīng)商更新時(shí)間2026-1-20 16:11:00

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