250V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor?’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

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FAIRCHILD

仙童半導(dǎo)體

功率 MOSFET，N 溝道，QFET?，250 V，0.83 A，1.75 Ω，SOT-223

該 N 溝道增強(qiáng)型功率 MOSFET 產(chǎn)品采用飛兆半導(dǎo)體的專有平面條形和 DMOS 技術(shù)生產(chǎn)。這種先進(jìn)的 MOSFET 技術(shù)已專門(mén)定制用來(lái)降低導(dǎo)通電阻，并提供卓越的開(kāi)關(guān)性能和較高的雪崩能量強(qiáng)度。這些器件適用于開(kāi)關(guān)電源、有源功率因數(shù)校正（PFC）及照明燈電子鎮(zhèn)流器。 ?0.83A, 250V, RDS(on)= 1.75Ω（最大值）@VGS = 10 V, ID = 0.415A柵極電荷低（典型值：4.3nC)\n?低 Crss（典型值4.8pF)\n?Low Crss ( Typ. 4.8pF);

ONSEMI

安森美半導(dǎo)體

N-Channel QFET? MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor?’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

文件：1.73029 Mbytes 頁(yè)數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

250V N-Channel MOSFET

Features ? 3.0 A, 250 V, RDS(on) = 1.75 ? (Max) @VGS = 10 V ? Low gate charge (Typ. 4.3 nC) ? Low Crss (Typ. 4.8 pF) ? Fast switching ? 100 avalanche tested ? Improved dv/dt capability

文件：722.8 Kbytes 頁(yè)數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel QFET MOSFET

文件：1.7968 Mbytes 頁(yè)數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.0A@ TC=25℃ ·Drain Source Voltage -VDSS=250V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.75Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

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