200V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h

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FAIRCHILD

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200V LOGIC N-Channel MOSFET

General Description\nThese N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.\nThis advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig ? 4.5A, 200V, RDS(on) = 1.2? @VGS = 10 V\n? Low gate charge ( typical 4.8 nC)\n? Low Crss ( typical 6.0 pF)\n? Fast switching\n? 100% avalanche tested\n? Improved dv/dt capability\n? Low level gate drive requirement allowing direct\n?? operation from logic drivers;

ONSEMI

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200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

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FAIRCHILD

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=4.5A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

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200V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：605.36 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體