500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

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FAIRCHILD

仙童半導體

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 40A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.11Ω(Max)@VGS= 10V APPLICATIONS · Switched Mode Power Supplies · FPC · Electronic Lamp Ballasts

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ISC

無錫固電

功率 MOSFET，N 溝道，QFET?，F(xiàn)RFET?，500 V，40 A，110mΩ，TO-264

該 N 溝道增強型功率 MOSFET 產(chǎn)品采用飛兆半導體的專有平面條形和 DMOS 技術生產(chǎn)。這種先進的 MOSFET 技術已專門定制用來降低導通電阻，并提供卓越的開關性能和較高的雪崩能量強度。這些器件適用于開關電源、有源功率因數(shù)校正（PFC）及照明燈電子鎮(zhèn)流器。 ?40A, 500V, RDS(on)= 110mΩ（最大值）@VGS = 10 V, ID = 20A柵極電荷低（典型值：155nC)\n?低 Crss（典型值95pF)\n?100% 經(jīng)過雪崩擊穿測試\n?快速恢復體二極管（最大值 250ns）\n?Fast recovery body diode ( Max. 250ns );

ONSEMI

安森美半導體

Power MOSFET(Vdss=500V, Rds(on)typ.=0.087ohm, Id=46A)

Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamicdv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Low Trr and Soft Diode Recovery ● High Performance Optimised Anti-parallel Diode Applications

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IRF

Power MOSFET

FEATURES ? Superfast Body Diode Eliminates the Need for ?? External Diodes in ZVS Applications ? Lower Gate Charge Results in Simpler Drive ?? Requirements ? Enhanced dV/dt Capabilities Offer Improved Ruggedness ? Higher Gate Voltage Threshold Offers Improved Noise ?? Immunity ? Compliant

文件：163.5 Kbytes 頁數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：191.04 Kbytes 頁數(shù)：9 Pages

VISHAYVishay Siliconix

威世威世科技公司